Effect of gamma irradiation on β-Ga2O3 vertical Schottky barrier diode

In this paper, the radiation effect of gamma irradiation (Co-60) on the Au/Ni/beta-Ga2O3 vertical Schottky barrier diodes (SBDs) was investigated for total doses of about 1 Mrad (Si). The SBDs were characterized by current density-voltage (J-V) and capacitance-voltage (C-V) measurements. Compared with original beta-Ga2O3 SBDs, it was found that Schottky barrier height Phi(b) increases from 1.08 to 1.12 eV, the ideality factor n decreases from 1.07 to 1.02, and the specific on-resistance R-on,R-sp decreases from 3.34 to 2.95 m Omegacm(2) for the irradiated beta-Ga2O3 SBDs. In addition, the carrier concentration calculated from the C-V measurements increases slightly after gamma irradiation. The temperature-dependent current-voltage characteristics and conductance-frequency measurements indicate that the Schottky contact interface of beta-Ga2O3 SBDs had been slightly improved after irradiation. These results suggest that beta-Ga2O3 SBDs have high intrinsic gamma irradiation hardness.

Automated summary

This study investigated the radiation effect of gamma irradiation on Au/Ni/beta-Ga2O3 vertical Schottky barrier diodes (SBDs). It was found that the irradiated SBDs showed improvements in Schottky barrier height, ideality factor, and specific on-resistance. The results suggest that beta-Ga2O3 SBDs have high intrinsic gamma irradiation hardness.