Gallium ions induced in-situ MOF-derived hierarchical porous Co3O4 for ultra-high acetone response

In order to monitor the quality of the surrounding environment and realize the non-invasive screening of diabetes, it is necessary to develop a simple and sensitive acetone sensor. In this paper, GCx porous structures doped with different proportions of Ga element are prepared through calcining Co-MOF synthesized by solvothermal method. The findings indicate that the addition of Ga inhibits the further growth of grain and improves the uniformity of the adhered nanoparticles in GCx. Performance test shows that the GC4 sensor exhibit extremely ultra-high response (197.6, 50 ppm) acetone at 160 degrees C and relatively low detection limit of 0.1 ppm (2.3). The main reason for the significant improvement of GCx acetone sensitivity is that the introduction of Ga regulates the oxygen vacancy which provide rich reaction activation sites for the further reaction and diffusion of acetone and amplify resistance change by modulating the carrier concentration. A practical method for controlling oxygen vacancy and carrier concentration of sensing materials is shown in this work, which creates a new opportunity for the development of high-performance acetone sensors.

Automated summary

This paper develops a simple and sensitive acetone sensor by introducing gallium (Ga) element into GCx porous structures. The addition of Ga inhibits grain growth and improves nanoparticle uniformity in GCx. The performance test shows that the GC4 sensor exhibits extremely high response to acetone at high temperature and has a relatively low detection limit.