Influence of Antimony doping on electrical and photoelectrical response in Indium Selenide crystals

Indium Selenide (InSe) is the most suitable photovoltaic conversion material with narrow band gap (1.3 eV) in the layered semiconductors. The optical and transport properties of InSe offer significant potential for promising applications in the modern era of electronics and photo-electronic devices. The aim is achieved by high electric conductivity of InSe crystals, SbXIn1-XSe (x= 0.00, 0.10, 0.15, 0.20) crystals was grown by direct vapour transport (DVT) technique. The chemical compositional and surface morphology properties of grown crystals were studied by energy dispersive X-ray analysis (EDAX) and scanning electron microscope (SEM) respectively. The hexagonal crystal structure of grown crystal has revealed by X-ray diffraction (XRD) spectra. The dopant concentration of antimony (Sb) was found to have a decreasing effect on the optical band gap and activation energy as calculated through absorption spectra and Arrhenius relations respectively. The photo-response parameters: growth-decay and trap-depth parameters have been obtained using growth-decay curve. These results confirm that SbXIn1-XSe crystal was collective applicant for electronic and optoelectronic devices.

Automated summary

Indium Selenide (InSe) is a highly suitable material for photovoltaic conversion with narrow band gap. Its optical and transport properties have great potential in modern electronics and photo-electronic devices. The effects of antimony dopant concentration on the optical band gap and activation energy have been studied.