☆ 4.6 Article

Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer

Hao Wu et al.

Summary: In this study, we investigated the soft breakdown (BD) behavior in thin-barrier (TB) AlGaN/GaN Schottky barrier diode (SBD) with carbon-doped GaN buffer. The soft BD behavior is a result of multiple mechanisms coupling together. In the off-state, ionized carbon (C) acceptors cause electric field (E-field) crowding at the cathode and induce impact ionization. The holes generated by impact ionization compensate for the ionized C acceptors, suppressing E-field crowding and preventing further avalanche BD. Residual holes flow to and accumulate under the anode, leading to a continuous increase in the Schottky E-field and Schottky leakage, eventually causing the soft BD. Schottky leakage is highly sensitive to the Schottky E-field in the TB structure due to the tunneling effect, resulting in an abnormally high leakage rise rate during soft BD.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

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Proceedings Paper Engineering, Electrical & Electronic

Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

S. Abhinay et al.

Summary: This paper presents an extensive experimental study and simulations on the impact of different stress scenarios on the ESD robustness of GaN RF HEMTs. The study highlights the importance of different current discharge paths for each stress scenario and verifies the contribution of the on-state gate Schottky diode to the robustness of the HEMTs. Additionally, three types of HBM failure mechanisms are identified under different stress scenarios.

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

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Article Multidisciplinary Sciences