Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Here, we present a study of the effective piezoelectric constant (e14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e14e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e14e = -0.0534 +/- 0.0040 C center dot m-2 at 23 degrees C was obtained for an SOA with 1.2 nm [111]-oriented strained In0.687Ga0.313As/In0.807Ga0.193As0.304P0.696 QWs. Unlike previously published research, where e14e magnitude increased as temperature rised, we extracted an e14e magnitude that decreased as temperature increased.

Automated summary

This study investigates the temperature dependence of the effective piezoelectric constant (e14e) in strained [111]-oriented quantum wells embedded within a semiconductor optical amplifier (SOA). The method used in this study is insensitive to segregation phenomenon and temperature dependence of the bandgap energy. Unlike previous research, the results show that the magnitude of e14e decreases as temperature increases.