Effects of electric and magnetic fields on Goos-Hänchen shifts in semi-Dirac systems

The semi-Dirac system has been of interest in recent years due to the exotic band structure, which is linear in one direction, but quadratic in a direction perpendicular to it. In the paper we study effects of electric and magnetic fields on the Goos-Hanchen (GH) shift in a semi-Dirac system. Our results show that the magnitude and direction of the GH shift depend on the incidence angle, the height and width of the electric barrier, and the magnetic field. The GH shifts exhibit the saltus step at the critical magnetic field. And the critical magnetic field decreases with the increase of the potential barrier thickness. The magnetic field plays a suppressive role on magnitude of the GH shift. Furthermore, applying the electric field in the III region, the magnitude of the GH shift can be significantly enhanced. The GH shift is a maximum at the point where the transmission probability reaches a minimum. These properties will be useful for the applications in semi-Dirac based electronic devices.

Automated summary

This paper investigates the effects of electric and magnetic fields on the Goos-Hanchen (GH) shift in a semi-Dirac system. The results show that the magnitude and direction of the GH shift depend on various factors such as incidence angle, electric barrier height and width, and magnetic field. It is observed that there is a saltus step in GH shifts at the critical magnetic field, which decreases with increased potential barrier thickness. Additionally, the GH shift can be significantly enhanced by applying an electric field in the III region. These findings are important for the development of semi-Dirac based electronic devices.