Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface

The electric properties of the carbon dangling-bond (P-bC) center at a thermally oxidized 4H-SiC(0001)/SiO2 interface are investigated. We experimentally and theoretically determine the energy levels of the associated interface states to estimate the impacts of the P-bC center on power device operations. By combining electrically detected magnetic resonance spectroscopy and capacitance-voltage measurements, the two P-bC electronic levels [(0/-) and (+/0)] are determined as similar to 1.2 and 0.6 eV from the valence band maximum, respectively. The effective correlation energy of the P-bC center is 0.6 eV, which is 1.5 times larger than that of the silicon dangling-bond (P-b) center at Si/SiO2 interfaces. Our first-principles calculations confirm that the electronic levels of P-bC are similar to experimental values. Considering these energy levels, the P-bC center must impact both p- and n-channel devices, which is closely related to previously reported channel features. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

Automated summary

The electric properties of the carbon dangling-bond (P-bC) center at a thermally oxidized 4H-SiC(0001)/SiO2 interface were investigated, and the energy levels of the associated interface states were determined. The impacts of the P-bC center on power device operations were evaluated. It was found that the P-bC center has larger correlation energy compared to the silicon dangling-bond (P-b) center, and it influences both p- and n-channel devices.