☆ 4.8 Article

Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes

ACS APPLIED MATERIALS & INTERFACES (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Materials Science, Multidisciplinary

High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters

Tianyi Tang et al.

Summary: Direct epitaxial growth of high-quality GaSb epilayers with low defect density on on-axis silicon substrates using interface engineering through all-molecular beam epitaxy (MBE) technology was successfully achieved. The defect self-annihilation mechanism of GaSb grown on silicon substrates was systematically investigated, revealing the formation of a misfit dislocation array at the AlSb/Si interface and the annihilation of threading dislocations and antiphase domain boundary. A 2 μm GaSb epilayer with a step-flow surface, low roughness, and good crystalline quality was obtained. The photoluminescence of the GaSb/AlGaSb quantum well on Si substrate was also demonstrated, indicating the potential for Sb-based infrared optoelectronic and microelectronic devices on CMOS-compatible Si substrates.

OPTICAL MATERIALS EXPRESS (2023)

添加到收藏夹

Article Physics, Applied

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Dong Han et al.

Summary: In recent years, there has been a strong demand for GaSb-on-Si direct heteroepitaxy to expand the operating wavelength range to mid-infrared and high-mobility applications. However, the growth of high-quality GaSb films on Si is challenging due to the generation of high-density defects. In this study, we proposed a novel design and growth strategy to achieve the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD) through the use of a V-grooved Si hollow structure and InGaSb/GaSb dislocation filtering layers. The reported results greatly improve the overall quality of epitaxial Si-based antimonide, benefiting various devices and critical applications.

APPLIED PHYSICS LETTERS (2023)

添加到收藏夹

Article Chemistry, Physical

Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications

Seungwan Woo et al.

Summary: Epitaxial growth of bulk InAs1-xSbx layer on GaAs substrate is a promising method for cost-effective long-wavelength infrared sensors. This study focuses on the analysis of metamorphic InAsSb layers grown on an InAs/GaAs virtual substrate with optimized growth conditions and group-V flux control. The research reveals that increasing Sb composition leads to significant surface roughening, but lowering the growth temperature mitigates this while allowing strain relaxation. Furthermore, a high Sb composition also results in a dramatic increase in threading dislocation density. The narrow energy bandgap achieved in the InAs0.42Sb0.58 layer demonstrates its potential for long-wavelength infrared optoelectronics applications.

APPLIED SURFACE SCIENCE (2023)

添加到收藏夹

Article Energy & Fuels

GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer

Yeonhwa Kim et al.

Summary: Epitaxial growth of III-V materials on Si is a promising approach for Si-based multi-junction solar cells. Transparent n-In0.1Al0.9As/n-GaAs strained layer superlattice dislocation filter layers can effectively reduce the threading dislocation density in the GaAs buffer on Si. The GaAs/Si tandem cell exhibited good performance, paving the way for monolithically integrated triple-junction solar cells on Si substrates.

ENERGIES (2023)

添加到收藏夹

Article Chemistry, Multidisciplinary

Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off

Seungwan Woo et al.

Summary: We demonstrate the feasibility of growing GaAs thin film solar cells epitaxially on a Si substrate using a metal wafer bonding and epitaxial lift-off process. The use of a virtual substrate and optimization of materials and processes on the GaAs/Si virtual substrate enables the realization of high-efficiency solar cells.

APPLIED SCIENCES-BASEL (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Flexible p-i-n InAs thin-film photodetector with low dark current enabled by an InAlAs barrier

Seungwan Woo et al.

Summary: This study demonstrates high-performance flexible InAs photodetectors with an optimized barrier layer. The inserted barrier layer reduces leakage currents by blocking the flow of electrons, resulting in a 283-fold reduction. The fabricated flexible device exhibits low dark current densities and high mechanical robustness and reliability.

OPTICAL MATERIALS EXPRESS (2022)

添加到收藏夹

Review Optics

Mid-infrared III-V semiconductor lasers epitaxially grown on Si substrates

Eric Tournie et al.

Summary: This article reviews the research field of mid-infrared semiconductor lasers integrated on Si substrates, with a focus on the epitaxial integration of antimonide lasers. It explains the high-performance diode lasers, quantum cascade lasers, and interband cascade lasers achieved through molecular-beam epitaxy and metal-organic vapor phase epitaxy techniques. The article also discusses the potential of etching the facets of antimonide lasers grown on Si for photonic integrated circuits.

LIGHT-SCIENCE & APPLICATIONS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Enhanced Photoluminescence of 1.3?m InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission

Yeonhwa Kim et al.

Summary: By reducing the thickness of the GaAs buffer and inserting an Al0.4Ga0.6As electron barrier layer, photoluminescence enhancement of QDs can be achieved, leading to the fabrication of efficient light-emitting diodes on a silicon substrate.

ACS APPLIED MATERIALS & INTERFACES (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded InxAl1-xAs Buffer

Seungwan Woo et al.

Summary: The flexible InAs thin-film mid-infrared photodetector arrays demonstrated in this study show high detectivity and excellent optical performance. The use of an abruptly graded InxAl1-xAs buffer significantly improves the lift-off interface morphology and reduces the threading dislocation density.

ACS APPLIED MATERIALS & INTERFACES (2021)

添加到收藏夹

Article Optics

GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Laura Monge-Bartolome et al.

Summary: The performance of GaSb-based laser diodes grown on different buffer layer designs was compared, highlighting the critical importance of buffer layer stack design and fabrication steps in achieving epitaxial integration of GaSb-based optoelectronic devices on Si substrates.

OPTICS EXPRESS (2021)

添加到收藏夹

Article Optics

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Marta Rio Calvo et al.

OPTICA (2020)

添加到收藏夹

Article Physics, Applied

Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Geunhwan Ryu et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy

Ugur Serincan et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

Evangelia Delli et al.

ACS PHOTONICS (2019)

添加到收藏夹

Article Physics, Applied

Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Daehwan Jung et al.

APPLIED PHYSICS LETTERS (2018)

添加到收藏夹

Article Energy & Fuels

Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers

A. Mansoori et al.

SOLAR ENERGY MATERIALS AND SOLAR CELLS (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

T. Cerba et al.

THIN SOLID FILMS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing

Ventsislav M. Lavchiev et al.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2017)

添加到收藏夹

Article Physics, Applied

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Daehwan Jung et al.

JOURNAL OF APPLIED PHYSICS (2017)

添加到收藏夹

Article Crystallography

Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

J. B. Rodriguez et al.

JOURNAL OF CRYSTAL GROWTH (2017)

添加到收藏夹

Article Optics

The HITRAN2016 molecular spectroscopic database

I. E. Gordon et al.

JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER (2017)

添加到收藏夹

Article Crystallography

Characterization of 6.1 Å III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

A. P. Craig et al.

JOURNAL OF CRYSTAL GROWTH (2016)

添加到收藏夹

Article Physics, Applied

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque et al.

APPLIED PHYSICS LETTERS (2012)

添加到收藏夹

Article Optics

Mid-infrared photonics in silicon and germanium

Richard Soref

NATURE PHOTONICS (2010)

添加到收藏夹

Article Physics, Applied

Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

T. J. Grassman et al.

APPLIED PHYSICS LETTERS (2009)

添加到收藏夹

Article Materials Science, Multidisciplinary

Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

B. Kunert et al.

THIN SOLID FILMS (2008)

添加到收藏夹

Proceedings Paper Thermodynamics

High speed Short Wave Infrared (SWIR) imaging and range gating cameras

Jesse Battaglia et al.

THERMOSENSE XXIX (2007)

添加到收藏夹

Article Physics, Applied

Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study

Y. H. Kim et al.

APPLIED PHYSICS LETTERS (2006)

添加到收藏夹

Review Engineering, Electrical & Electronic

Antimonide-based compound semiconductors for electronic devices: A review

BR Bennett et al.

SOLID-STATE ELECTRONICS (2005)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of micro-twin defects on InSb quantum wells

TD Mishima et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)

添加到收藏夹

Article Physics, Applied

Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

VK Yang et al.

JOURNAL OF APPLIED PHYSICS (2003)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.