Effects of different crucible shapes on heat and oxygen transport during continuous Czochralski silicon crystal growth

Article Crystallography

Numerical study on the effects of inner crucible window heights on the growth of silicon in a continuous Czochralski process

Wenjia Su et al.

Summary: The effects of different inner crucible window heights on the growth of continuous Czochralski silicon were numerically studied and compared. The results showed that the inner crucible significantly changed the flow structure and velocity distribution of the silicon melt, intensifying the turbulence and blocking heat transfer. However, it also reduced the convexity of the crystal-melt interface. Decreasing the window height of the inner crucible increased the heat blocking effect and crystal growth rate. Adopting a lower window height was beneficial to the growth of continuous Czochralski silicon, considering the risk near the crystal-melt interface.

JOURNAL OF CRYSTAL GROWTH (2023)

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Article Engineering, Electrical & Electronic

Controlling the heat, flow, and oxygen transport by double-partitions during continuous Czochralski (CCz) silicon crystal growth

Thi-Hoai-Thu Nguyen et al.

Summary: This study investigates the numerical effect of the depths of two partitions on heat, flow, and oxygen transport during the CCz growth of an 8-inch diameter silicon crystal. The different depths of the partitions influence the effective wall surface area, which is the main source of oxygen at the growth interface, as well as the melt motion and heat transfer within the crucible. The diffusion and convection of oxygen from the partitions and crucible wall towards the free surface and crystal-melt interface are also affected. The choice of at least one long partition prevents the entry of unmelted granular silicon into the melt region under the crystal-melt interface. A comparison of different cases shows that longer partition near the crystal-melt interface (90 mm) and shorter partition near the crucible sidewall (40 mm) result in lower power consumption and oxygen content along the growth interface.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)

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Article Crystallography

Effects of different partition depths on heat and oxygen transport during continuous Czochralski (CCz) silicon crystal growth

Thi-Hoai-Thu Nguyen et al.

Summary: A series of quasi-steady numerical simulations are conducted to investigate the effects of different partition depths on the growth of 8-inch-diameter silicon crystals using the CCz method. The results show that the oxygen content increases with increasing partition depth up to a certain point, but reverses for higher partition depths.

JOURNAL OF CRYSTAL GROWTH (2022)

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Article Crystallography

Control of Oxygen Impurities in a Continuous-Feeding Czochralski-Silicon Crystal Growth by the Double-Crucible Method

Wenhan Zhao et al.

Summary: The continuous-feeding Czochralski method is a cost-effective way to grow single silicon crystals. The inner crucible plays a more important role in affecting the oxygen concentration at the melt-crystal interface than the outer crucible. Enlarging the inner crucible diameter can help control the oxygen concentration at the melt-crystal interface.

CRYSTALS (2021)

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Article Engineering, Electrical & Electronic

Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth

Thi-Hoai-Thu Nguyen et al.

Summary: The research shows that under high magnetic ratios, melt flow is hindered by the Lorentz force, while diffusion plays a greater role in oxygen transport in the bulk melt. Additionally, microdefect density in the silicon crystal can be reduced and radial uniformity can be enhanced under appropriate growth conditions.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

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Article Crystallography