High-Performance Carbon Nanotube Thin-Film Transistor Technology

Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era. Experiments have shown that CNT-based planar CMOS transistors can be scaled down to sub-10 nm technology nodes, demonstrating excellent performance far exceeding the silicon limit. At the same time, CNT electronic technology is essentially a thin-film transistor technology, which enables the construction of chips on such substrates as glass and polymers with an area of several meters, providing technical support for large-area and flexible electronic applications. In addition, since CNT electronics technology involves only low-temperature processes (less than 400(degrees)C), the monolithic 3D integration of logic and memory devices can be realized which can greatly improve the comprehensive performance of the chip and lead to a thousand-fold performance increase for special data structures, especially in AI applications.

Automated summary

Semiconducting single-walled carbon nanotubes (CNTs) have ideal properties for constructing transistors, surpassing the limits of silicon. CNT technology also enables the development of large-area and flexible electronic applications, and low-temperature processing allows for monolithic 3D integration of logic and memory devices.