期刊
ADVANCED FUNCTIONAL MATERIALS
卷 -, 期 -, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202311210
关键词
doping; III-V semiconductor nanostructures; impurity defects; nanowire lasers; optical pumping; photoluminescence spectroscopy; selective area growth on silicon
This study evaluates the impact of impurity-induced point defects on the lasing performance of GaAs-AlGaAs based nanowire lasers. The findings demonstrate that these lasers have remarkably low lasing thresholds under Si doping and are highly tolerant to impurity defects. This discovery is significant for the application of nanowire lasers.
GaAs-AlGaAs based nanowire (NW) lasers hold great potential for on-chip photonic applications, where lasing metrics have steadily improved over the years by optimizing resonator design and surface passivation methods. The factor that will ultimately limit the performance will depend on material properties, such as native- or impurity-induced point defects and their impact on non-radiative recombination. Here, the role of impurity-induced point defects on the lasing performance of low-threshold GaAs(Sb)-AlGaAs NW-lasers is evaluated, particularly by exploring Si-dopants and their associated vacancy complexes. Si-induced point defects and their self-compensating nature are identified using correlated atom probe tomography, resonant Raman scattering, and photoluminescence experiments. Under pulsed optical excitation the lasing threshold is remarkably low (<10 J cm(-2)) and insensitive to impurity defects over a wide range of Si doping densities, while excess doping ([Si]>10(19) cm(-3)) imposes increased threshold at low temperature. These characteristics coincide with increased Shockley-Read-Hall recombination, reflected by shorter carrier lifetimes, and reduced internal quantum efficiencies (IQE) . Remarkably, despite the lower IQE the presence of self-compensating Si-vacancy defects provides an improved temperature stability in lasing threshold with higher characteristic temperature and room-temperature lasing. These findings highlight an overall large tolerance of lasing metrics to impurity defects in GaAs-AlGaAs based NW-lasers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据