Polarization-induced magnetoelectric effect in Fe3Ga/HfO2/Fe3Ga heterojunction

Fe3Ga/HfO2/Fe3Ga heterojunction possesses reasonable lattice mismatch and good ferroelectric at the nanoscale. However, its magnetoelectric coupling is unexplored. Based on the first-principles calculations, we demonstrate that the magnetoelectric coupling in Fe3Ga/HfO2/Fe3Ga heterojunction is induced by polarization, which is different from the common strain-mediated magnetoelectric effect. The polarization-induced magnetoelectric effect of heterojunction is explained by the analyses of orbital-resolved density of states and spin densities, finding that the interfaces between Fe3Ga and HfO(2 )play an important role in magnetoelectric coupling, offering an alternative pathway for generating magnetoelectric coupling at room temperature.

Automated summary

Based on first-principles calculations, this study reveals that the magnetoelectric coupling in Fe3Ga/HfO2/Fe3Ga heterojunction is induced by polarization, rather than the common strain-mediated magnetoelectric effect. The interfaces between Fe3Ga and HfO2 play a crucial role in the polarization-induced magnetoelectric effect.