Magnetic, Antiferroelectric-like Behavior and Resistance Switching Properties in BiFeO3-CaMnO3 Polycrystalline Thin Films

The effect of ferromagnetic CaMnO3 (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO3 is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P-E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching.

Automated summary

The effect of ferromagnetic CaMnO3 (CMO) addition on the structural, magnetic, dielectric, and ferroelectric properties of BiFeO3 is investigated. The results show that CMO doping can modify the magnetic and ferroelectric properties of BiFeO3, which is of great significance for its applications.