Role of Zn doping in improving opto-nonlinear and photodetection properties of spray pyrolysis grown Cd1-xZnxS nanostructured thin films

The present work reports Cd1-xZnxS (x = 0.0, 1.0, 3.0 and 5.0 wt%) nanostructured thin films growth on glass substrates via spray pyrolysis technique. As grown films exhibited hexagonal wurtzite structure with preferred orientation along (002) plane. The optical band gaps of the samples were obtained in the range-2.41-2.45 eV. The incorporations of 5.0 wt% Zn in CdS matrix revealed a significant widening in the band gap of the films. In addition, the films nonlinear optical properties were also improved with Zn doping in the CdS system. The films optoelectronics parameters such as response, recovery time, and detectivity were measured as functions of Zn doping concentrations. The prepared films revealed a remarkable visible light photodetection that is improved with the increasing Zn doping concentrations. The optoelectronic parameters such as external quantum effi-ciency (EQE), detectivity (D*) and responsivity (R) were obtained and found in the order of-0.48-553, 1 x 109-1 x 1011 Jones and 0.15-1.72 A/W, respectively. The obtained results demonstrate the superior performance of the Cd1-xZnxS system and its high suitability for advanced optoelectronic applications.

Automated summary

This work presents the synthesis of Cd1-xZnxS nanostructured thin films on glass substrates via spray pyrolysis technique. The incorporation of Zn in the CdS matrix widens the band gap and improves the nonlinear optical properties of the films. The Cd1-xZnxS films exhibit remarkable visible light photodetection, with high external quantum efficiency, detectivity, and responsivity.