期刊
OPTICS AND LASER TECHNOLOGY
卷 170, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2023.110315
关键词
Single-crystalline Si; Laser-induced electrodeposition; Simulation analysis; Morphology evaluation; Mechanism discussion
This study investigates the laser-induced localized and maskless electrodeposition of micro copper structures on p-type silicon surface through simulation and experimental study. It demonstrates the selective enhancing effect of laser irradiation on electrical conductivity via thermal and photoconductive manner. Experimental tests of laser-induced electrodeposition show the effectiveness of the proposed method in producing micro-wires, regional coatings, and complex patterns on silicon surface without a mask. The study discusses the factors affecting the quality of the deposited layer and provides an in-depth analysis of the electrodeposition mechanism.
The simulation and experimental study of laser-induced localized and maskless electrodeposition of micro copper (Cu) structures on p-type silicon (Si) surface is investigated. Firstly, calculations of the internal temperature field and free electron density distribution within Si under nanosecond laser irradiation were carried out, to demonstrate the selective enhancing effect of laser irradiation on electrical conductivity via the thermal and photoconductive manner. Secondly, experimental tests of the laser-induced electrodeposition of micro-wires, regional coatings and complicated patterns on Si surface without mask were performed successively, to illustrate the effectiveness of the proposed method. The experimental results indicate that laser pulse width and scanning space significantly affect the quality of the deposited layer. Specifically, dense and flat micro wires can be achieved when the laser pulse width is 100 ns, which is associated with a width of about 71.7 mu m and thickness of around 10.9 mu m. In addition, the laser scanning space should be well optimized to balance the uniformity of the regional coating and the stray deposition near the edge. Finally, the reduction of Cu2+ and deposition of Cu atom at Si surface were discussed, as well as the development of transitional layer, to supply an in-depth analysis of the electrodeposition mechanism.
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