Modulation of localized phonon thermal transport at GaN/AlxGa1-xN heterointerface: Polar surface, doping, and compressive Strain

The phonon transport processes within a few atomic layers near heterointerfaces play a crucial role in thermoelectric applications such as nitride-based high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs). However, a systematic investigation of their localized transport characteristics remains unexplored. This article employs the Interfacial Phonons method based on first-principles calculations to extract interface phonon information for GaN/AlxGa1-xN heterostructures. Molecular dynamics simulations are utilized to compare the phonon behaviors between Ga-face and N-face GaN-based heterointerfaces. The research extensively investigates the dependence of interfacial thermal transport on the concentration of Al atoms under ordered substitutional doping and the strength of uniaxial compressive strain. The research revealed that both Gaface and N-face GaN/AlxGa1-xN heterointerfaces exhibit phonon branch drift. The differences in charge distribution at the polar surfaces lead to varying degrees of Brillouin zone distortion. The vibrational modes of the atoms at the N-face GaN interface are more compact and localized than those of Ga-face GaN, resulting in a stronger degree of localization for the optical phonon branches. When varying the doping concentration of Al atoms, some phonon branches at the GaN interface appear outside the band structure of the intrinsic bulk and surface states, exhibiting strong localized characteristics. The introduction of Al atoms at the heterointerface induces additional phonon scattering, and the lattice vibration mismatch between Al and Ga atoms results in a non-uniform residual stress field at the interface, further enhancing phonon-interface scattering. Moderate compressive strain-induced lattice distortion promotes the overlapping of phonon modes at the interface, allowing some localized phonons to serve as interface transport modes. This optimization enhances phonon transport at the heterointerface. This research provides valuable insights into a comprehensive understanding of interfacial thermal transport in GaN-based semiconductors. Moreover, it offers useful theoretical guidance for thermal management through the manipulation of phonon wave properties.

Automated summary

This study investigates the phonon transport processes at heterointerfaces and reveals their dependence on Al atom concentration and compressive strain. The research shows that the introduction of Al atoms and compressive strain enhance phonon-interface scattering and promote phonon transport at the heterointerface.