Photoexcited carriers transfer properties in a doped double quantum dots photocell

Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by doping, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this doping DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.

Automated summary

This study evaluates the transfer qualities of photoexcited carriers in doped DQDs photocells and finds that certain structure parameters caused by doping can significantly control the transfer properties. Additionally, slightly increasing the ambient temperature benefits the transfer performance in this doping DQDs photocell model.