4.5 Article

Photoexcited carriers transfer properties in a doped double quantum dots photocell

期刊

EUROPEAN PHYSICAL JOURNAL PLUS
卷 138, 期 11, 页码 -

出版社

SPRINGER HEIDELBERG
DOI: 10.1140/epjp/s13360-023-04660-4

关键词

-

向作者/读者索取更多资源

This study evaluates the transfer qualities of photoexcited carriers in doped DQDs photocells and finds that certain structure parameters caused by doping can significantly control the transfer properties. Additionally, slightly increasing the ambient temperature benefits the transfer performance in this doping DQDs photocell model.
Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by doping, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this doping DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据