期刊
出版社
ELSEVIER
DOI: 10.1016/j.nima.2023.168917
关键词
Channeling; Bent crystal; Volume reflection; Radiation spectra; Relativistic molecular dynamics
Computational modeling of high-energy electron passage through crystalline media is conducted using relativistic molecular dynamics. The results show good agreement with experimental data, demonstrating the accuracy of the simulations. Minor discrepancies between theory and experiment are discussed.
Computational modeling of passage of high-energy electrons through crystalline media is carried out by means of the relativistic molecular dynamics. The results obtained are compared with the experimental data for 855 MeV electron beam incident on oriented bent ultra-thin (15 microns) silicon and germanium crystals. The simulations have been performed for the geometries of the beam-crystal orientation that correspond (i) to the channeling regime and (ii) to the volume reflection. A comparison with the experiment is carried out in terms of angular distributions of the electrons deflected by the crystals bent with different curvature radii as well as of the spectra of the emitted radiation. For both crystals a good agreement between the simulated and experimentally measured data is reported. The origin of remaining minor discrepancies between theory and experiment is discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据