期刊
PHYSICAL REVIEW X
卷 6, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevX.6.021017
关键词
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资金
- Ministry of Science and Technology of China [2015CB921300, 2013CB921700, 2011CBA00108]
- National Natural Science Foundation of China [11227903, 11474340, 11422428, 11274362, 11234014]
- Chinese Academy of Sciences [XDB07000000]
- State of Texas through TcSUH
Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe5 crystal hosts a large full gap of similar to 100 meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states.
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