Microwave Annealing for Enhanced Performance of Flexible MoS2 FET Based on Electromagnetic Losses in Electrode

In this study, we present a novel microwave annealing (MWA) technique that exploits the electromagnetic loss of metal electrodes as a heat source to enhance the performance of multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) on flexible plastic substrates without inflicting thermal damage. We employed COMSOL-based temperature distribution analysis to understand the compatibility of our MWA process with flexible polyethylene naphthalate (PEN) substrates operating within a low thermal budget. Electrical characterizations, including mobility, contact and channel resistances, subthreshold slope, and trap density, were used to validate the effectiveness of our annealing process, with the results indicating significant improvements. Furthermore, by modulating the thickness of the electrode overlay, we demonstrated the possibility of achieving distinct annealing temperatures for different materials in the same experimental batch at an identical power level, thereby enhancing annealing efficiency. Moreover, when compared to traditional thermal annealing, our method showed superior performance in terms of enhanced electrical properties and reduced annealing time.

Automated summary

In this study, a novel microwave annealing technique was proposed to enhance the performance of multilayer MoS2 FETs on flexible plastic substrates. By modulating the thickness of the electrode overlay, different annealing temperatures for different materials could be achieved, thereby improving annealing efficiency. Compared to traditional thermal annealing, this method showed superior performance in terms of improved electrical properties and reduced annealing time.