期刊
CHEMICAL ENGINEERING JOURNAL
卷 478, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2023.147345
关键词
Carrier mobility; S-scheme heterojunction; Photocatalysis; Degradation pathway; SnO/TiO2
In this study, a S-type heterojunction SnO/TiO2 was designed and the carrier transferring mechanism was verified through experimental and theoretical calculations. In terms of photocatalytic performance, SnO/TiO2 heterojunction exhibited outstanding degradation performance.
Enhancing the efficiency of carrier migration and separation plays a pivotal role in promoting photocatalytic performance. Constructing S-scheme heterojunction is a promising strategy to achieve this desired objective. Here, we rationally designed and preciously synthesized SnO{0 0 1}/TiO2{0 0 1} S-scheme heterojunction with exceptionally high hole mobility (1122 cm2/(V center dot s)), which ranks among the best of reported works. SnO{0 0 1}/ TiO2{0 0 1} heterojunctions exhibited outstanding performance of gaseous benzene degrading. The degradation rate constant of SnO/TiO2 heterojunction is 2.4675 h-1, and is boosted by 5.3 times compared with TiO2 (0.4595 h-1). Through the combination of theoretical calculation and experiment, S-scheme mode of carrier transferring was verified. The promoted hole mobility in SnO/TiO2 heterojunction enhances the production of center dot OH, further boosting photocatalytic performance. By analyzing the detected intermediates, we proposed degradation pathways for benzene, which provide a profound and elucidating view of complex processes in benzene photocatalytic degradation.
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