High-throughput thermodynamic study of SiC high-temperature chemical vapor deposition from TMS-H2

Article Crystallography

Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate

Siqi Zhao et al.

Summary: This paper studied the effect of temperature on the epitaxial layer during epitaxy on 4H-SiC SI substrates. It was found that 3C-SiC was obtained at low temperature, while 4H-SiC was obtained at higher temperature.

JOURNAL OF CRYSTAL GROWTH (2023)

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Article Crystallography

Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)

Shangyu Yang et al.

Summary: In this study, TCS was used as the silicon precursor to grow 4H-SiC epitaxial layers at lower temperatures (1350-1500 degrees C). The results showed that high-quality single crystal 4H-SiC epitaxial layers can be obtained at a growth temperature of 1450 degrees Celsius.

JOURNAL OF CRYSTAL GROWTH (2023)

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Article Crystallography

Characterization of epitaxial layers grown on 4H-SiC (000-1) substrates

Junhong Chen et al.

Summary: SiC is an excellent semiconductor material with high thermal conductivity, stable chemical properties, and high critical breakdown field strength. This paper investigates the epitaxial growth of SiC on n-type SiC substrates and analyzes the effects of growth temperature on the surface morphology of SiC epitaxial layers. The results show that higher growth temperature can lead to smoother surface and higher content of 4H-SiC.

JOURNAL OF CRYSTAL GROWTH (2023)

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Article Engineering, Electrical & Electronic

A Scalable Enhancement-Mode Junctionless SiC FET with Embedded P+ Pockets in the Oxide Layer for High-Temperature Applications

Ratul Kumar Baruah et al.

Summary: In this study, a double-gate junctionless SiC FET with an embedded P+ pocket in the oxide layer (P+-SiCJLT) is investigated for high-temperature and high-voltage applications. The P+-SiCJLT exhibits better performance compared to a device of similar dimensions without the P+ layer (SiCJLT), as it allows for efficient volume depletion, improves current ratios, enhances intrinsic gain, and enables enhancement-mode operation.

JOURNAL OF ELECTRONIC MATERIALS (2023)

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Article Materials Science, Multidisciplinary

Structural characteristics of 3C-SiC thin films grown on Si-face and C-face 4H-SiC substrates by high temperature chemical vapor deposition

Zhe Chuan Feng et al.

Summary: The hetero-epitaxy of 3C-SiC on Si-face and C-face 4H-SiC was experimentally investigated, and a corresponding growth model was identified. This study provides valuable insights for band-gap engineering and various applications of SiC.

VACUUM (2023)

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Article Thermodynamics

Thermodynamic modeling of KCl-PrCl3 and KCl-LiCl-PrCl3 systems

Soumya Sridar et al.

Summary: Molten salt electrolysis is used to recover actinides from spent nuclear fuels, using a molten LiCl-KCl electrolyte. This study employed the CALPHAD approach to thermodynamically model the KCl-PrCl3 and KCl-LiCl-PrCl3 systems for the first time. Experimental data and thermodynamic functions were utilized for the assessment of these systems, and good agreement was observed between the experimental and calculated results. This work contributes to determining the solubility limit of PrCl3 in molten LiCl-KCl electrolytes and improving the efficiency of the pyrochemical process.

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY (2023)

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Review Metallurgy & Metallurgical Engineering

Review of solution growth techniques for 4H-SiC single crystal

Gang-qiang Liang et al.

Summary: Silicon carbide (SiC) is a wide-bandgap semiconductor with excellent inherent properties for high-power, high-frequency, and high-temperature devices. Solution growth has been favored for producing SiC single crystal ingots with low dislocation density and doping concentrations ranging from 10(14) to 10(19) cm(-3). Various techniques, such as solution growth on a concave surface, melt-back, accelerated crucible rotation technique, two-step growth, and facet growth, have been developed based on top-seeded solution growth. Multiple parameters, including meniscus, solvent design, flow control, dislocation conversion, facet growth, and graphite component structures, contribute to high-quality single crystal growth. This paper reviews the solution growth techniques and corresponding parameters in SiC bulk growth.

CHINA FOUNDRY (2023)

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Review Materials Science, Ceramics

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Minh-Tan Ha et al.

Summary: This review summarizes the results of computational simulations of SiC bulk crystal growth using three primary methods: physical vapor transport, high-temperature chemical vapor deposition, and top-seeded solution growth. The simulations reveal the effects of physicochemical phenomena on crystal growth behaviors and facilitate the optimization of process parameters for high-quality and high-yield crystal growth. Additionally, the use of machine learning techniques for parameter design and optimization is introduced.

JOURNAL OF THE KOREAN CERAMIC SOCIETY (2022)

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Article Physics, Applied

Compensation of p-type doping in Al-doped 4H-SiC

Yuanchao Huang et al.

Summary: One of the major challenges of 4H-silicon carbide (4H-SiC) is the difficulty in preparing low resistivity p-type single crystal. This study investigates the compensation of native defects and self-compensation in Al-doped 4H-SiC and finds that V-C(2+) acts as one of the dominant compensating centers. The passivation of V-C(2+) and quenching can effectively enhance the hole concentration of Al-doped 4H-SiC.

JOURNAL OF APPLIED PHYSICS (2022)

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Article Multidisciplinary Sciences

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Zhe Cheng et al.

Summary: In this study, the authors report isotropic high thermal conductivity of 3C-SiC wafers exceeding 500 W m(-1)K(-1). The material not only has high thermal conductivity, but also provides important insights into fundamental phonon transport mechanisms, making it an excellent material for next-generation power electronics.

NATURE COMMUNICATIONS (2022)

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Article Physics, Applied

Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity

Kazutoshi Kojima et al.

Summary: 4H-SiC epitaxial layers with ultrahigh resistivity of over 10(10) omega cm were grown using a hot wall chemical vapor deposition system with vanadium doping, and the resistivity was found to be dependent on the type of dopant impurities.

JOURNAL OF APPLIED PHYSICS (2022)

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Article Chemistry, Multidisciplinary

Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder

Guanglei Zhong et al.

Summary: A novel Al doping method using p-type SiC powder was proposed for the growth of p-type SiC crystals. The continuity and utilization rate of Al element were greatly improved by using p-type SiC powder, leading to a significant reduction in resistivity and improvement in resistivity uniformity of the crystals.

CRYSTENGCOMM (2022)

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Article Chemistry, Multidisciplinary

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Shengtao Zhang et al.

Summary: By modeling and optimizing the physical fields in the SiC crystal growth process with the numerical simulation software Virtual Reactor, high-quality and large-sized SiC crystals were successfully prepared. This is of great importance for the application of SiC in the new energy industry.

RSC ADVANCES (2022)

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Article Nanoscience & Nanotechnology

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Mohamadali Malakoutian et al.

Summary: The implementation of SG-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, with gallium nitride (GaN) power amplifiers playing a crucial role in providing high frequency and power output. Cooling GaN devices with diamond has gained significant momentum in overcoming heat removal challenges, achieving record-low thermal boundary resistance at the diamond/GaN interface. Integration of diamond within close proximity to the GaN channel layer without degrading electrical behavior, along with the growth of isotropic polycrystalline diamond, has led to an efficient heat spread in both vertical and lateral directions. The impressive combination of thermal conductivity and low thermal boundary resistance marks a leading-edge achievement in this field.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Crystallography

Suppressing solvent compositional change during solution growth of SiC using SiC/C gradient crucible

Sakiko Kawanishi et al.

Summary: Utilizing the newly fabricated SiC/C gradient crucible allows for stable long-term growth of silicon carbide, maintaining crystal growth behavior and quality.

JOURNAL OF CRYSTAL GROWTH (2021)

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Article Chemistry, Physical

Comparative study of melting of graphite and graphene

Yu D. Fomin et al.

CARBON (2020)

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Article Materials Science, Multidisciplinary

The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Emilio Scalise et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

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Article Crystallography

Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers

Yingxi Niu et al.

JOURNAL OF CRYSTAL GROWTH (2019)

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Article Engineering, Electrical & Electronic

Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits

Kai Matsuura et al.

SOLID-STATE ELECTRONICS (2019)

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Article Materials Science, Multidisciplinary

High temperature strength of refractory complex concentrated alloys

O. N. Senkov et al.

ACTA MATERIALIA (2019)

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Article Materials Science, Multidisciplinary

Co-deposition of diamond and β-SiC by microwave plasma CVD in H2-CH4-SiH4 gas mixtures

V. S. Sedov et al.

DIAMOND AND RELATED MATERIALS (2019)

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Article Crystallography

Reduction of morphological defects in 4H-SiC epitaxial layers

Yun Li et al.

JOURNAL OF CRYSTAL GROWTH (2019)

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Article Materials Science, Ceramics

Fast preparation of (111)-oriented β-SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2

Qingfang Xu et al.

JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2018)

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Article Crystallography

Thermodynamic design of a high temperature chemical vapor deposition process to synthesize α-SiC in Si-C-H and Si-C-H-Cl systems

Yura Kang et al.

JOURNAL OF CRYSTAL GROWTH (2018)

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Article Materials Science, Multidisciplinary

Recent progress in the development of SiC composites for nuclear fusion applications

T. Koyanagi et al.

JOURNAL OF NUCLEAR MATERIALS (2018)

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Review Engineering, Electrical & Electronic

Review of SiC crystal growth technology

Peter J. Wellmann

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)

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Article Chemistry, Physical

Key experiments and challenging thermodynamic modeling of the Li-Si-C system

Song-Mao Liang et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2017)

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Article Materials Science, Ceramics

Preparation of highly oriented β-SiC bulks by halide laser chemical vapor deposition

Hong Cheng et al.

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY (2017)

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Article Physics, Applied

An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD

Shiyang Ji et al.

APPLIED PHYSICS EXPRESS (2017)

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Article Crystallography

Stable and high-speed SiC bulk growth without dendrites by the HTCVD method

Yuichiro Tokuda et al.

JOURNAL OF CRYSTAL GROWTH (2016)

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Article Chemistry, Multidisciplinary

Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth

Byeong Geun Kim et al.

CRYSTENGCOMM (2015)

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Article Physics, Applied

Synthesis of α-SiC from tetramethylsilane by chemical vapor deposition at high temperature

Seong-Min Jeong et al.

APPLIED PHYSICS EXPRESS (2014)

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Article Chemistry, Multidisciplinary

High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor

Deok-Hui Nam et al.

CRYSTAL GROWTH & DESIGN (2014)

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Article Crystallography

Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals

B. Gao et al.

JOURNAL OF CRYSTAL GROWTH (2014)

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Article Materials Science, Multidisciplinary

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

Milan Yazdanfar et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2014)

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Article Electrochemistry

a-SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors

Aleksander M. Wrobel et al.

CHEMICAL VAPOR DEPOSITION (2013)

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Article Materials Science, Multidisciplinary

A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals

Tatsuo Fujimoto et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)

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Review Chemistry, Multidisciplinary

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Henrik Pedersen et al.

CHEMICAL REVIEWS (2012)

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Article Crystallography

Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature

Seong-Min Jeong et al.

JOURNAL OF CRYSTAL GROWTH (2012)

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Article Materials Science, Multidisciplinary

On melting of silicon carbide under pressure

P. S. Sokolov et al.

JOURNAL OF SUPERHARD MATERIALS (2012)

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Article Materials Science, Multidisciplinary

Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments

Feng Zhao et al.

MATERIALS LETTERS (2011)

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Article Materials Science, Multidisciplinary

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

S. Leone et al.

MATERIALS RESEARCH BULLETIN (2011)

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Article Crystallography

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H-2 and C3H8

B. L. VanMil et al.

JOURNAL OF CRYSTAL GROWTH (2009)

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Article Physics, Condensed Matter

Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique

Hidekazu Tsuchida et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2009)

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Article Crystallography

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

H. Pedersen et al.

JOURNAL OF CRYSTAL GROWTH (2007)

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Article Physics, Atomic, Molecular & Chemical

Mass spectrometric study of gas-phase chemistry in a hot-wire chemical vapor deposition reactor with tetramethylsilane

X. M. Li et al.

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY (2007)

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Article Crystallography

Micropipe healing in SiC wafers by liquid-phase epitaxy in Si-Ge melts

O Filip et al.

JOURNAL OF CRYSTAL GROWTH (2004)

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Article Materials Science, Coatings & Films

High vacuum chemical vapor deposition of cubic SiC thin films on Si(001) substrates using single source precursor

JH Boo et al.

SURFACE & COATINGS TECHNOLOGY (2000)

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High-throughput thermodynamic study of SiC high-temperature chemical vapor deposition from TMS-H2

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