期刊
JOURNAL OF CRYSTAL GROWTH
卷 626, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2023.127489
关键词
SiC; Thermodynamic method; TMS; Consumption efficiency; High-throughput
A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system by high-throughput thermodynamic method is conducted with a large experimental condition range (500 2700 K, 0 75 kPa, and H-2:TMS ratio of 0.1 to 10000) towards the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method. The temperature, pressure and H-2:TMS ratio dependence phase diagrams are calculated to describe the deposition condition of single-phase gas + SiC region. Due to the etching effect of hydrogen on graphite, the increasing temperature and pressure could suppress the formation of graphite and favor the growth of SiC in the H-2:TMS ratio above 1000, however, excessive H-2:TMS ratio could reduce the TMS consumption efficiency. TMS consumption efficiency maps focusing on the gas + SiC region based on the phase diagrams have been carried out to balance the deposition parameters, SiC mole fraction and TMS consumption efficiency. When H-2:TMS ratio > 1000, an accepted window for preparing single-phase SiC with a high TMS consumption efficiency (>90%) is provided, and this window could expand furtherly with increasing the ratio. TMS consumption efficiency maps offer the theoretic basis and guidance for improving the quality and cost of industrial production of single-crystal SiC by HTCVD method.
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