期刊
MRS COMMUNICATIONS
卷 6, 期 1, 页码 9-15出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrc.2015.84
关键词
-
资金
- New Energy and Industrial Technology Development Organization (NEDO)
Low-propagation-loss silicon wire waveguides are key components of optical integrated circuits. In this paper, we clarified, through assessment of the relationship between waveguide loss and fabrication technology that high-resolution lithography and an adjusted lithography process window are important for low-loss waveguides. The silicon wire waveguides fabricated by high-resolution lithography technology using ArF immersion lithography process showed world-record low propagation losses of 0.40 dB/cm for the C-band and 1.28 dB/cm for the O-band. Analysis with Barwicz and Haus's theory indicated that sidewall scattering is the main cause of propagation loss even in such low-loss waveguides.
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