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Sung-Lin Tsai et al.
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Ping Wang et al.
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Andrew C. Meng et al.
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K. Hirata et al.
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Jordan A. Hachtel et al.
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Electric field imaging of single atoms
Naoya Shibata et al.
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Songrui Zhao et al.
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K. A. Grossklaus et al.
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Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth
Bo-Ra Yeom et al.
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E. Galopin et al.
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B. Alling et al.
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S Gradecak et al.
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W Utsumi et al.
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Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers
S Tomiya et al.
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