期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 171, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2023.107988
关键词
Silicon nanotubes; Double-walled; Stone-wales; SCC-DFTB
The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
The geometric structure and electrical properties of the zigzag DWSiNT (8,0)@(12,0) and armchair DWSiNT (5,5)@(7,7) perfect tubes with the same diameter are simulated by self-consistent charge density functional tight binding method (SCC-DFTB). We considered the defective tubes by introducing three types of Stone-Wales (SW) defects, and further investigated the impact of both strong and weak electric fields on these defective tubes. Calculations demonstrate that the atomic arrangement regularity, degree of buckling, stability, energy gap, and charge distribution strongly depend on the type of perfect tubes. Following the introduction of the SW defects, the symmetry of the tubes disappeared, and there is a obvious atomic aggregation occurring at the defects. The armchair tubes demonstrate a higher stability compared to zigzag tubes and all exhibit metallic properties. SWII and SWIII defects in zigzag tubes result in a transition from semiconductor to semi-metallic properties. The number of charge transfer increases, and the degree of atomic aggregation is more dispersed. The effect of applied electric field strength on perfect zigzag tubes is more obvious. The weak field has minimally impacted on the stability, and the strong field makes the stability improved to some extent. The presence of a strong field caused the energy gap values of (8,0)@(12,0) tube decrease sharply, and all tubes are transformed into semimetal or metal. The weak electric field has a more pronounced regulation of band gap within the range of 0 V/nm - 0.3 V/nm on the inner tube. The consequences of this investigation can certainly be helpful in future experimental studies.
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