☆ 4.8 Article

Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

NANO LETTERS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Nanoscience & Nanotechnology

p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

Ryoichi Kato et al.

Summary: In this study, high-performance p-type FETs were achieved by selectively applying surface charge-transfer doping from WOx to the access region of WS2 and WSe2. The p-type conversion of intrinsically n-type trilayer WSe2 FET was successfully achieved by reducing the Schottky barrier width and injecting holes into the valence band. However, trilayer WS2 did not show clear p-type conversion due to its lower valence band maximum compared to trilayer WSe2. Using h-BN as a TG insulator, a high-performance p-type WSe2 FET with negligible hysteresis was achieved.

ACS APPLIED MATERIALS & INTERFACES (2023)

添加到收藏夹

Review Chemistry, Multidisciplinary

P-Type 2D Semiconductors for Future Electronics

Yunhai Xiong et al.

Summary: 2D semiconductors, with their superior carrier mobility and gate-control capability at atomic thickness, are considered as one of the best options to extend Moore's law. However, reliable p-type 2D semiconductors with majority carriers of holes are still scarce. This article reviews the material toolkit, synthesis strategies, device basics, and digital electronics related to p-type 2D semiconductors, and discusses their opportunities, challenges, and prospects for future electronic applications.

ADVANCED MATERIALS (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOx Interfacial Layer

Hao-Yu Lan et al.

Summary: This study reports a new dielectric interface engineering approach using a relatively high-kappa TaOx interfacial layer to improve the performance of monolayer MoS2 transistors. The TaOx layer not only minimizes active interface trap states, but also acts as an efficient doping layer. This research paves the way for high-performance logic devices based on 2-D materials.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

添加到收藏夹

Article Chemistry, Multidisciplinary

Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts

Tien Dat Ngo et al.

Summary: Achieving low contact resistance (R-C) is a major challenge in producing 2D FETs. In this work, the electrical characteristics of semimetal and normal metal-contacted MoS2 devices are analyzed. Semimetal contacts significantly reduce R-C and have a strong dependence on top gate-voltage (V-TG), while normal metal contacts only modulate R-C by varying bottom gate-voltage (V-BG). The anomalous behavior is attributed to weak Fermi level pinning (FLP) of semimetal contacts.

ADVANCED SCIENCE (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Self-Aligned Contact Doping of WSe2 Metal-Insulator-Semiconductor Field-Effect Transistors Using Hydrogen Silsesquioxane

Ho Hyun Im et al.

Summary: In this study, a self-aligned contact doping method and remote oxygen plasma treatment were used to fabricate a WSe2-based top gate FET with minimal contamination and damage. The results showed that the device exhibited excellent electrical characteristics and neither the WSe2 nor the gate dielectric was damaged by the remote oxygen plasma. This proposed method can be an effective device manufacturing method in the future.

ACS APPLIED ELECTRONIC MATERIALS (2023)

添加到收藏夹

Article Chemistry, Multidisciplinary

Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping

Aaryan Oberoi et al.

Summary: This study presents a three-pronged approach to achieve high-performance p-type FETs based on synthetic WSe2, including contact engineering, channel length scaling, and monolayer doping. By using Pd as the contact metal and monolayer WOxSey as the p-type dopant, the ON-state performance of the FETs was significantly improved and the contact resistance was reduced.

ACS NANO (2023)

添加到收藏夹

Review Chemistry, Multidisciplinary

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Xiaochi Liu et al.

Summary: This article discusses the impact of Fermi level pinning (FLP) in 2D semiconductor devices and its causes. The authors indicate that FLP is mainly due to inefficient doping into 2D materials, vdW gap at the metal interface, and hybridized compounds formed under contacting metals. The article further explores the effects of FLP on 2D device performance and methods for improving metallic contact to 2D materials.

ADVANCED MATERIALS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices

Chin-Cheng Chiang et al.

Summary: This study demonstrates that a pure nitric oxide treatment at elevated temperatures can provide stable p-doping for monolayer WSe2, significantly improving the performance of p-type WSe2 transistors.

IEEE ELECTRON DEVICE LETTERS (2022)

添加到收藏夹

Article Multidisciplinary Sciences

P-type electrical contacts for 2D transition-metal dichalcogenides

Yan Wang et al.

Summary: This study reports a method for preparing high-performance p-type devices on two-dimensional transition-metal dichalcogenides (TMDs), and demonstrates ideal interfaces and no chemical interactions between the materials through atomic resolution imaging and spectroscopy.

NATURE (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Tien Dat Ngo et al.

Summary: This study presents a simple method to selectively pattern degenerately p-type-doped WSe2 FETs through electron beam irradiation, achieving the OFF state of the devices. The threshold voltage of the devices can be accurately controlled by varying the pattern size and e-beam dose, while maintaining low contact resistance. High-performance WSe2 p-FETs are achieved by using hBN as the gate dielectric.

ADVANCED SCIENCE (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

How to report and benchmark emerging field-effect transistors

Zhihui Cheng et al.

Summary: This study proposes guidelines for reporting and benchmarking the parameters and performance of field-effect transistors, addressing challenges in device performance assessment and offering a more consistent and meaningful approach for the field to progress.

NATURE ELECTRONICS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2

Zheng Sun et al.

Summary: This work presents a statistical study of ultrashort channel double-gated ML WS FETs, which exhibit excellent device performance and limited device-to-device variations. Through detailed analysis and simulations, the unexpected deterioration of subthreshold characteristics is observed and two potential causes are identified.

ACS NANO (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

Min Sup Choi et al.

Summary: Doped graphene using a monolayer of tungsten oxyselenide can significantly enhance room-temperature mobility and control hole density, showing promise for applications in next-generation electronic and photonic devices.

NATURE ELECTRONICS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Controllable p-Type Doping of 2D WSe2 via Vanadium Substitution

Azimkhan Kozhakhmetov et al.

Summary: This study reports the successful scalable growth and vanadium doping of 2D WSe2 at compatible temperatures, confirming p-type doping via substitutional replacement of tungsten by vanadium atoms. The p-type nature of the V dopants is further verified by constructed field-effect transistors.

ADVANCED FUNCTIONAL MATERIALS (2021)

添加到收藏夹

Article Physics, Applied

High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions

Xiaochi Liu et al.

Summary: This study demonstrates a unique structure of two-dimensional p-MOSFET with controlled oxygen plasma-induced degenerate p-doping in contact areas, achieving excellent device performances including low threshold voltage, high on/off ratio, and high hole mobility.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Chemical Dopant-Free Doping by Annealing and Electron Beam Irradiation on 2D Materials

Min Sup Choi et al.

Summary: The study reveals a novel technique of chemical-free doping in 2D material MoTe2, achieving p- and n-doping effects through annealing and electron beam irradiation. This opens up new research avenues in fabricating CMOS devices.

ADVANCED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

Abhinandan Borah et al.

Summary: This study reports the use of tungsten oxyselenide as a dopant to achieve the lowest total p-type contact resistance and high dopant density in sub-5 nm thin WSe2. The doping remains active at low temperatures and shows promising stability, leading to significant improvement in device characteristics and potential for high-performance p-type transistors.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Atomically Controlled Tunable Doping in High-Performance WSe2Devices

Chin-Sheng Pang et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Kirstin Schauble et al.

ACS NANO (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors

Andrew J. Arnold et al.

ACS NANO (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Control of the Schottky Barrier and Contact Resistance at Metal-WSe2Interfaces by Polymeric Doping

Tien Dat Ngo et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Review Materials Science, Multidisciplinary

WSe2 2D p-type semiconductor-based electronic devices for information technology: Design, preparation, and applications

Qilin Cheng et al.

INFOMAT (2020)

添加到收藏夹

Review Materials Science, Multidisciplinary

Chemical and structural stability of 2D layered materials

Xuewen Wang et al.

2D MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Quest for p-Type Two-Dimensional Semiconductors

Qiyuan He et al.

ACS NANO (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment

Inyong Moon et al.

NANOSCALE (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Transferred via contacts as a platform for ideal two-dimensional transistors

Younghun Jung et al.

NATURE ELECTRONICS (2019)

添加到收藏夹

Review Chemistry, Multidisciplinary

Contact engineering for 2D materials and devices

Daniel S. Schulman et al.

CHEMICAL SOCIETY REVIEWS (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2

Lili Cai et al.

NANO LETTERS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Changsik Kim et al.

ACS NANO (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Mahito Yamamoto et al.

NANO LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

Hema C. P. Movva et al.

ACS NANO (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

Mahito Yamamoto et al.

NANO LETTERS (2015)

添加到收藏夹

Review Chemistry, Physical

Electrical contacts to two-dimensional semiconductors

Adrien Allain et al.

NATURE MATERIALS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

Wei Liu et al.

NANO LETTERS (2013)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.