期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 -, 期 -, 页码 -出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d3tc03445c
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In this study, a novel boron subnaphthalocyanine derivative was introduced into the perovskite film to passivate defects and modify the energetic positions, leading to outstanding performance and superior stability of perovskite solar cells.
Shallow and deep level defects often act as a pathway of ion migration and Shockley-Read-Hall recombination centers, respectively, in semiconductor materials, degrading the photoelectric performance and long-term stability of assembled photovoltaic devices. In this study, we introduce a novel semiconductive boron subnaphthalocyanine derivative (B-SubPc-F) with multi-functional groups into the surface and shallow layer of the perovskite film to further enhance the performance and stability of perovskite solar cells (PSCs). As a positive consequence, the detrimental defects of PbI anti-site defects and iodide vacancies are effectively passivated, while simultaneously modifying the energetic positions at the perovskite/spiro-OMeTAD interface to facilitate charge transport. As a result, the PSCs treated with B-SubPc-F exhibit an outstanding PCE of 23.35%, significantly surpassing that of the control device (21.75%). Additionally, the B-SubPc-F-treated PSCs exhibit superior moisture and thermal stability, with devices retaining 78% of their initial efficiency after being subjected to 348 h at 85 degrees C w/o encapsulation, in contrast to the control device, which retained only 16% of its PCE after thermal aging under the same conditions. A novel boron subnaphthalocyanine derivative was introduced into the perovskite film to synchronously passivate the dual defects and modify the energetic positions at the perovskite/HTL interface, resulting an outstanding PCE and superior stability.
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