期刊
INTERNATIONAL JOURNAL OF ELECTRICAL POWER & ENERGY SYSTEMS
卷 155, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ijepes.2023.109672
关键词
Insulated-gate bipolar transistors (IGBTs); Junction temperature consideration; Power system simulation; Thermal modeling; Two-level voltage source converter (VSC)
This paper proposes a simplified thermal model of VSC, which can produce accurate results at a low computational cost. The model consists of a simple first-order thermal dynamics system and two quadratic equations to model power losses. A methodology is also provided to derive the model parameters from manufacturer data.
This paper proposes a simplified yet accurate enough thermal model of Voltage Source Converters (VSC), aimed at circumventing the high computational cost of existing models, which prevents their use in electromechanical simulations. The proposed model reduces to a simple first-order system for thermal dynamics plus two quadratic equations separately modeling the IGBT and diode power losses. In addition, a methodology is provided to derive the proposed VSC thermal model parameters from manufacturer data. The proposed model is tested for two types of devices, both in steady and transient states. The results show that the reduced-order thermal model produces accurate results at a low computational cost, making it especially suitable for the co-simulation of thermal and electrical dynamic phenomena.
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