In this study, Eu-doped YVO4 single crystals with different concentrations were fabricated to evaluate their photoluminescence and scintillation properties. The results showed that the samples doped with Eu exhibited emission peaks due to 4f-4f transitions in PL and scintillation spectra. Based on the pulse height spectra, the light yield of the Eu-doped samples increased with increasing Eu concentration, while the afterglow level decreased.
0.1, 0.5, 1.0, and 5.0 % Eu-doped YVO4 single crystals were fabricated to assess photoluminescence (PL) and scintillation properties. The powder X-ray diffraction patterns of all the fabricated samples were the same as that of reference, and a single-phase structure of YVO4 was observed. The emission peaks owing to the 4f-4f transitions of Eu3+ ions were observed at 590, 605, 615, 620, and 695 nm in PL and scintillation spectra. Based on the pulse height spectra, Eu-doped samples had the light yield of 28,000 (0.1 % Eu), 33,000 (0.5 % Eu), 42,000 (1.0 % Eu), and 37,000 (5.0 % Eu) photons/MeV. In afterglow profiles, the afterglow level of 0.1, 0.5, 1.0, and 5.0 % Eu-doped samples was 58.1, 61.1, 49.1, and 35.6 ppm.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据