Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0.5Zr0.5O2 films by adopting oxygen-supplying electrode

Article Nanoscience & Nanotechnology

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

H. Alex Hsain et al.

Summary: By inserting a 1 nm Al2O3 layer at the HZO/TiN interface, a protective passivating layer is introduced, resulting in improved remanent polarization and endurance of TiN/HZO/TiN capacitors.

NANOTECHNOLOGY (2023)

添加到收藏夹

Review Nanoscience & Nanotechnology

A perspective on the physical scaling down of hafnia-based ferroelectrics

Ju Yong Park et al.

Summary: HfO2-based ferroelectric thin films have attracted significant interest for their compatibility with CMOS technology. While they can be scaled to thicknesses as low as 10 nm while retaining ferroelectric properties, reducing the thickness below 5 nm and preserving ferroelectricity remains a challenge. This review extensively discusses the size effect of HfO2-based ferroelectric thin films and explores the impact of thickness on ferroelectric properties and the electrical performance of devices. Recent developments in achieving sub-5 nm ferroelectric HfO2 and its applications are also discussed.

NANOTECHNOLOGY (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices

Younghwan Lee et al.

Summary: This article discusses the effects of stress/strain on FF thin films, including the mechanisms, material properties, and device performances. Research in this field is crucial for understanding and optimizing FF thin films and related devices.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)

添加到收藏夹

Article Physics, Multidisciplinary

Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO2

Li-Yang Ma et al.

Summary: In this study, the influence of oxygen vacancies on the performance of HfO2-based devices was systematically investigated using a first-principles-based variable-cell nudged elastic band technique. It was found that positively charged oxygen vacancies can promote the transition from nonpolar phases to polar phases kinetically, facilitated by a transient high-energy tetragonal phase and charge-carrier-inert ferroelectricity. The intricate coupling between the kinetics of structural polymorphism and the charge state of the oxygen vacancy has important implications for the origin of ferroelectricity and various exotic effects in HfO2-based thin films.

PHYSICAL REVIEW LETTERS (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction

Teng-Jan Chang et al.

Summary: In recent years, the interest in Hf0.5Zr0.5O2 (HZO) thin films has grown due to their well-behaved ferroelectricity and high compatibility with semiconductor integrated circuit technology. The phase transformation and wake-up effect in HZO were identified using the precession electron diffraction (PED) phase mapping technique. The absence of the tetragonal (t-) phase is responsible for the wake-up-free property in the ferroelectric HZO thin film. The wake-up-free and pronounced ferroelectricity of the nanoscale HZO thin film in this study may have practical implications for various ferroelectric applications.

ACTA MATERIALIA (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode

Kun Yang et al.

Summary: The ferroelectricity of Hf0.5Zr0.5O2 thin films makes them suitable for current and future electronic devices. A new strategy of providing oxygen from a surface-oxidized W electrode is proposed to maximize the remanent polarization of Hf0.5Zr0.5O2. Comparisons between Hf0.5Zr0.5O2 thin films with TiN and W electrodes reveal that the oxygen supply from the W electrode enhances the ferroelectric properties and increases the remanent polarization.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)

添加到收藏夹

Article Nanoscience & Nanotechnology

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Jose P. B. Silva et al.

Summary: Ferroelectric hafnium and zirconium oxides have shown significant progress in ultralow-power electronic systems, but technical limitations still hinder their application. This article aims to provide a comprehensive overview of the current state, challenges, and prospects for the development of these materials, with the collaboration of experts from different fields.

APL MATERIALS (2023)

添加到收藏夹

Review Materials Science, Coatings & Films

Many routes to ferroelectric HfO2: A review of current deposition methods

Hanan Alexandra Hsain et al.

Summary: This review summarizes the process knowledge accumulated in the field of ferroelectric HfO2 over the past 10 years. It examines the effect of process parameters in different deposition methods on film microstructure, phase evolution, defect concentration, and electrical properties. The goal is to provide a comprehensive guide for the design of future HfO2-based ferroelectric materials and devices.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution

Joonbong Lee et al.

Summary: A strategy to enhance the ferroelectric properties of polycrystalline hafnium zirconium oxide (HZO) ultrathin films by modifying the oxygen pressure during device preparation is described. The formation of characteristic TiO2-x interfacial layers between the TiN electrode and HZO thin film under different oxygen treatment conditions directly impacts the distribution of the deposited HZO and facilitates the generation and stabilization of the ferroelectric orthorhombic phase HZO by promoting the uniform distribution of oxygen vacancies.

ADVANCED MATERIALS INTERFACES (2022)

添加到收藏夹

Article Physics, Applied

Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy

Wassim Hamouda et al.

Summary: The field cycling behavior of microscopic ferroelectric capacitors was studied, and the changes in oxygen vacancy concentration and Schottky barrier height were measured. The results showed that the polarization direction influenced the distribution of oxygen vacancies and caused changes in the Schottky barrier height.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Physics, Applied

The influence of crystallographic texture on structural and electrical properties in ferroelectric Hf0.5Zr0.5O2

Younghwan Lee et al.

Summary: This study investigates the influence of texture of the bottom electrode and Hf0.5Zr0.5O2 (HZO) films on properties and performance, using a consistent deposition process known as Sequential, No-Atmosphere Processing (SNAP). The results provide new insights on the importance of the bottom electrode texture and new fundamental processing-structure-property relationships for the HZO films.

JOURNAL OF APPLIED PHYSICS (2022)

添加到收藏夹

Article Physics, Applied

The impact of rapid thermal annealing for the ferroelectricity of undoped sputtered HfO2 and its wake-up effect

O. Gronenberg et al.

Summary: This study investigates the ferroelectric properties of sputtered and undoped HfO2 and reveals the effects of different temperature treatments on its performance. The research finds that temperature treatments affect the interfaces of the TiN electrodes and the microstructure and defect concentration of HfO2, leading to variations in device performance.

JOURNAL OF APPLIED PHYSICS (2022)

添加到收藏夹

Article Physics, Applied

Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal-ferroelectric-metal capacitor fabricated without breaking vacuum

Younghwan Lee et al.

Summary: The study introduces a new ALD technique SNAP to fabricate ferroelectric Hf0.5Zr0.5O2 capacitors and reveals different ferroelectric behaviors depending on the annealing temperature. Analysis of XRD patterns and depth profiling suggests differences between TiN and Hf0.5Zr0.5O2 layers made via SNAP deposition, potentially impacting the performance of the capacitors.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Chemistry, Physical

Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget

Chin- Wang et al.

Summary: This paper reports significant ferroelectricity in 6 nm HZO thin films achieved by TiN capping electrode prepared by atomic layer deposition (ALD). The mechanisms of the TiN capping effect on the distinct ferroelectric properties are investigated, showing promising potential for next-generation ferroelectric applications.

APPLIED SURFACE SCIENCE (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

Yongsun Lee et al.

Summary: The ferroelectric properties of fluorite-type hafnia-based ferroelectric materials vary with different electrode materials, where electrodes with smaller CTE result in higher tensile stress and facilitate the formation of higher ferroelectric phases.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Electric-Field-Induced Ferroelectricity in 5%Y-doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase

Takao Shimizu et al.

Summary: In a 5%YO1.5-doped Hf0.5Zr0.5O2 epitaxial film, the tetragonal phase transforms to the orthorhombic phase under the influence of an electric field. Despite X-ray diffraction showing the film to be in a paraelectric tetragonal phase after heat treatment, polarization-electric field measurements reveal the presence of ferroelectricity. The crystal structure changes induced by electric field loading promote the irreversible phase transition to a ferroelectric orthorhombic phase.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films

Terence Mittmann et al.

Summary: This study investigates the influence of oxygen concentration in the electrodes on the ferroelectric properties during crystallization anneal. It is found that oxygen-deficient electrodes improve the stabilization of the ferroelectric orthorhombic phase and reduce the wake-up effect, while oxygen-rich electrodes stabilize the nonferroelectric monoclinic phase with a negative impact on ferroelectric properties.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

On the Origin of Wake-Up and Antiferroelectric-Like Behavior in Ferroelectric Hafnium Oxide

Maximilian Lederer et al.

Summary: Ferroelectric hafnium oxide is a promising material for integrated devices due to its large spontaneous polarization, with the discovery of electric field-induced crystallization and differences in wake-up behavior providing insights into physical mechanisms. Clear procedures have been established for experimental quantification and preparation of hafnium oxide phases for different wake-up types.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2021)

添加到收藏夹

Review Physics, Applied

Domains and domain dynamics in fluorite-structured ferroelectrics

Dong Hyun Lee et al.

Summary: Fluorite-structured ferroelectrics like HfO2 and ZrO2 have garnered increasing interest since 2011 for their potential in semiconductor devices and high-density information storage. Research on these materials has focused on understanding their ferroelectric properties and enhancing device performance to meet the requirements for high operating speed, reliability, and multilevel data storage.

APPLIED PHYSICS REVIEWS (2021)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications

Youngin Goh et al.

Summary: The experimental demonstration of high-performance hafnia-based ferroelectric tunnel junction (FTJ) with self-rectifying properties for neuromorphic computing and logic in memory application was achieved through stress engineering and diffusion barrier technology combined with imprint field effect. The proposed device provides a viable solution for high performance, low power, and high-density synaptic devices and TCAM applications.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Ri He et al.

Summary: The discovery of ferroelectric HfO2 in thin films and bulk is a significant breakthrough, but the origin of its ferroelectricity remains debated. The mechanism for stabilizing the polar orthorhombic phase may be related to oxygen vacancies.

PHYSICAL REVIEW B (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Maximilian Lederer et al.

Summary: The study shows that the properties of hafnium oxide films are greatly affected by the crystallization process, with annealing temperature playing a significant role in influencing the crystallographic properties and microstructure, thereby impacting the ferroelectric properties.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

Alireza Kashir et al.

Summary: By tuning the ozone pulse duration, annealing process, and metal/insulator interface, a wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization value was achieved. The use of a tungsten capping electrode and insertion of a Pt layer between the interfaces helped reduce leakage current while maintaining the 2Pr value constant.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Physics, Applied

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

W. Hamouda et al.

JOURNAL OF APPLIED PHYSICS (2020)

添加到收藏夹

Article Physics, Applied

Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1-x)O2 thin films

H. Alex Hsain et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Physics, Applied

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

W. Hamouda et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Chemistry, Physical

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2Thin Films

Si Joon Kim et al.

MATERIALS (2020)

添加到收藏夹

Article Physics, Applied

Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

Youngin Goh et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films

Tingfeng Song et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Youngin Goh et al.

NANOSCALE (2020)

添加到收藏夹

Review Materials Science, Multidisciplinary

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

Si Joon Kim et al.

JOM (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

Y. Zhou et al.

COMPUTATIONAL MATERIALS SCIENCE (2019)

添加到收藏夹

Article Physics, Applied

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

M. Lederer et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Wake-Up in a Hf0.5Zr0.5O2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching

Anastasia Chouprik et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Physics, Applied

Nanoscopic studies of domain structure dynamics in ferroelectric La: HfO2 capacitors

P. Buragohain et al.

APPLIED PHYSICS LETTERS (2018)

添加到收藏夹

Article Physics, Applied

Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films

Takao Shimizu et al.

APPLIED PHYSICS LETTERS (2018)

添加到收藏夹

Review Engineering, Electrical & Electronic

Applications of STEM-EELS to complex oxides

Jaume Gazquez et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films

Min Hyuk Park et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

Milan Pesic et al.

ADVANCED FUNCTIONAL MATERIALS (2016)

添加到收藏夹

Article Physics, Applied

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

S. Starschich et al.

APPLIED PHYSICS LETTERS (2016)

添加到收藏夹

Article Nanoscience & Nanotechnology

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films

Everett D. Grimley et al.

ADVANCED ELECTRONIC MATERIALS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Min Hyuk Park et al.

ADVANCED MATERIALS (2015)

添加到收藏夹

Article Physics, Applied

On the structural origins of ferroelectricity in HfO2 thin films

Xiahan Sang et al.

APPLIED PHYSICS LETTERS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-resolution characterization of the forbidden Si 200 and Si 222 reflections

Peter Zaumseil

JOURNAL OF APPLIED CRYSTALLOGRAPHY (2015)

添加到收藏夹

Article Physics, Applied

Stabilizing the ferroelectric phase in doped hafnium oxide

M. Hoffmann et al.

JOURNAL OF APPLIED PHYSICS (2015)

添加到收藏夹

Article Physics, Applied

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou et al.

APPLIED PHYSICS LETTERS (2013)

添加到收藏夹

Article Spectroscopy

A complete and self-consistent evaluation of XPS Spectra of TiN

Dominik Jaeger et al.

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA (2012)

添加到收藏夹

Article Physics, Applied

Ferroelectricity in hafnium oxide thin films

T. S. Boescke et al.

APPLIED PHYSICS LETTERS (2011)

添加到收藏夹

Article Materials Science, Multidisciplinary

First-principles study on the concentrations of native point defects in high-dielectric-constant binary oxide materials

J. X. Zheng et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2008)

添加到收藏夹

Article Physics, Applied

Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface:: A first-principles investigation

Nathalie Capron et al.

APPLIED PHYSICS LETTERS (2007)

添加到收藏夹

Article Materials Science, Multidisciplinary

Diffusion of O vacancies near Si:HfO2 interfaces:: An ab initio investigation

C. Tang et al.

PHYSICAL REVIEW B (2007)

添加到收藏夹

Article Multidisciplinary Sciences

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

DA Muller et al.

NATURE (2004)

添加到收藏夹

Article Physics, Applied

Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

GD Wilk et al.

APPLIED PHYSICS LETTERS (2003)

添加到收藏夹

Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0.5Zr0.5O2 films by adopting oxygen-supplying electrode

相关参考文献

导出引文

分享论文