期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 171, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2023.107987
关键词
Ge; Sn; Spintronics; Heusler alloy; Molecular beam epitaxy
In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
In this study, we demonstrate the low-temperature growth of a Ge layer via Sn doping in a ferromagnet/Ge/Cobased Heusler alloy multilayer on a Si(111) substrate having a vertically stacked structure. The continuous doping of 5% Sn into the Ge interlayer enables the epitaxial growth of the Ge layer on the Co-based Heusler alloy, even at similar to 110 degrees C, and reduces the surface roughness. Elemental mapping shows that low-temperature growth via Sn doping suppresses interdiffusion at the Ge/Co-based Heusler alloy interface. The magnetic properties of the all-epitaxial CoFe/Ge/Co-based Heusler alloy structure are improved. For vertical spinvalve devices with Sn doping, the room-temperature spin signal is enhanced. These results indicate that the chemically abrupt Ge/Co-based Heusler alloy interface enhances the magnitude of the room-temperature spin signal owing to Sn-induced low-temperature growth.
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