期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 5, 期 1, 页码 451-460出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01453
关键词
two-dimensional layered materials; 2D materials; gallium selenide; mechanical exfoliation; Raman spectra; photoresponsivity
In this study, the thickness-dependent optical and optoelectronic properties of mechanically exfoliated GaSe thin films were comprehensively studied. Raman and photoluminescence measurements were conducted on ultrathin GaSe flakes of different thicknesses to investigate the changes in their phonon modes and optical properties. Metal-semiconductor-metal (MSM) photodetectors were fabricated on GaSe flakes to understand the optoelectronic properties. Thicker GaSe flakes exhibited better performance, with a maximum photoresponsivity (R lambda) of approximately 0.21 A/W and an external quantum efficiency (EQE) of approximately 42 at 620 nm compared to thinner flakes. This study could contribute to the advancement of future high-performance optoelectronic devices based on quasi-2D materials.
Two-dimensional (2D)-layered materials are in prime focus of the researchers because of their excellent optoelectronic properties at the micro-and nanolevels. In this work, we have conducted a comprehensive study on the thickness-dependent optical and optoelectronic properties of the mechanically exfoliated GaSe thin films. Raman and photoluminescence measurements were done on the ultrathin GaSe flakes of different thicknesses to study the change in their phonon modes and optical properties. To understand the optoelectronic properties, metal-semiconductor-metal (MSM) photodetectors were fabricated on GaSe flakes. The performance of the photodetectors was measured in terms of the figure-of-merit parameters of a photodetector such as photoresponsivity (R lambda) and external quantum efficiency (EQE). Thicker GaSe flakes provided better performance, with a maximum value of R lambda and EQE of similar to 0.21 A/W and similar to 42, respectively, at 620 nm, as compared to thinner flakes. We believe our study could help to boost the development of future high-performance optoelectronic devices based on quasi-2D materials.
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