4.7 Review

Advances in silicon-based, integrated tunable semiconductor lasers

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Monolithic Passive-Active Integration of Epitaxially Grown Quantum Dot Lasers on Silicon

Zeyu Zhang et al.

Summary: Quantum dot (QD) lasers grown on silicon have shown promising characteristics, but the technology enabling growth and integration of these lasers on a silicon photonic chip has not yet been demonstrated. A novel device platform has been designed to integrate the QD active region with passive waveguide structures, allowing for the successful demonstration of various high-performance lasers on this platform.

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High-Performance Silicon Photonics Using Heterogeneous Integration

Chao Xiang et al.

Summary: This paper reviews the recent progress of high-performance silicon photonics using heterogeneous integration, focusing on ultra-low-loss waveguides, single-wavelength lasers, comb lasers, and photonic integrated circuits for LiDAR and datacenter interconnects.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2022)

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Integrated Coherent Tunable Laser (ICTL) With Ultra-Wideband Wavelength Tuning and Sub-100 Hz Lorentzian Linewidth

Paul A. Morton et al.

Summary: This paper introduces a new Integrated Coherent Tunable Laser (ICTL) that offers ultra-wideband wavelength tuning and ultra-low noise performance. The ICTL is designed to be cost-effective and reliable through its utilization of III-V material and a CMOS foundry based Silicon Photonics platform. The ICTL's exceptional laser reflector performance, extended laser cavity length, and low linewidth and phase noise enable highly-coherent output. The ICTL has achieved record integrated laser performance and shows great potential for next-generation applications such as WDM transmission systems, fiber-optic and medical-wearable sensing systems, and automotive LiDAR systems.

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Silicon nitride passive and active photonic integrated circuits: trends and prospects

Chao Xiang et al.

Summary: The use of silicon nitride in integrated photonics has made rapid progress in recent decades. It is a promising platform for nonlinear and microwave photonics, with potential applications in various fields. The integration of III-V materials with silicon nitride has enabled advanced photonic integrated circuits with versatile functionality. Future development should address the ultimate limits and challenges of silicon nitride-based photonic devices.

PHOTONICS RESEARCH (2022)

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Hybrid integrated external cavity laser with a 172-nm tuning range

Yuyao Guo et al.

Summary: This article introduces a hybrid-integrated external cavity laser, which achieves a tunable range of 172 nm and a side-mode suppression ratio of over 40 dB using a broadband reflective semiconductor optical amplifier and a low-loss Si3N4 wavelength-selective reflector. The Si3N4 platform enables a low-loss external cavity, reducing the laser linewidth to below 4 kHz over the full tuning range.

APL PHOTONICS (2022)

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Integrated Pockels laser

Mingxiao Li et al.

Summary: On-chip integration of laser systems has led to significant developments in various applications such as LIDAR and AR/VR. In this study, the authors achieved fast on-chip configurability of a narrow linewidth laser by utilizing the Pockels effect in an integrated semiconductor platform. The integrated laser demonstrated record-high frequency modulation speed and fast switching capability, as well as the ability to co-lase at infrared and visible frequencies, making it a promising solution for applications in LiDAR, microwave photonics, atomic physics, and AR/VR.

NATURE COMMUNICATIONS (2022)

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Micro-transfer printed silicon nitride grating couplers for efficient on-chip light coupling

Zuyang Liu et al.

Summary: This study presents a new post-processing approach to efficiently couple light in silicon nitride (Si3N4) photonic integrated circuits (PIC) via grating couplers. The approach involves the micro-transfer printing of thin-film apodised Si3N4 grating couplers with metallic bottom reflectors and adiabatic couplers onto the input and output of Si3N4 waveguides, enabling efficient coupling without compromising the rest of the PIC. Simulation results indicate high coupling efficiencies, and experimental data demonstrates significantly improved efficiency compared to standard designs.

INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XXVI (2022)

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Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Ruiling Zhao et al.

Summary: A hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability is presented, using a Si3N4 photonic circuit to combine two reflective semiconductor optical amplifier gain channels. The integration of a Vernier ring filter in the circuit selects a single longitudinal mode and reduces the laser linewidth, resulting in higher output power and narrower linewidth compared to single gain operation. Promising for applications in optical communications and light detection and ranging systems.

OPTICS EXPRESS (2021)

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High-performance lasers for fully integrated silicon nitride photonics

Chao Xiang et al.

Summary: Achieving high output power and low noise integrated lasers using Si/SiN heterogeneous platform with Hertz-level linewidth has been demonstrated. This paves the way for fully integrating low-noise silicon nitride photonics in volume. The high-performance lasers on SiN with tens of milliwatts output power and sub-kHz fundamental linewidth address issues of mode transition loss, cavity design, and fabrication process, marking a milestone towards fully integrated low-noise silicon nitride photonics platform.

NATURE COMMUNICATIONS (2021)

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A monolithic InP/SOI platform for integrated photonics

Zhao Yan et al.

Summary: This research introduces a monolithic InP/SOI platform that combines the advantages of silicon photonics and InP photonics, enabling various photonic functionalities and demonstrating potential. This marks a critical step towards fully-integrated Si-based PICs.

LIGHT-SCIENCE & APPLICATIONS (2021)

Article Engineering, Electrical & Electronic

Thermally Tuned High-Performance III-VSi3N4 External Cavity Laser

Yuyao Guo et al.

Summary: This paper presents a tunable III-V/Si3N4 hybrid-integrated external cavity laser with Si3N4 waveguides, showcasing a fast switching time and stable high output power within a certain tuning range.

IEEE PHOTONICS JOURNAL (2021)

Article Physics, Applied

Perspective on the future of silicon photonics and electronics

Near Margalit et al.

Summary: Advancements in silicon photonics and electronics are mutually reinforcing, enabling increased speed and bandwidth for silicon photonics-based assemblies through integration, though electronic system performance is constrained by I/O limitations. Co-packaged silicon photonics and electronics facilitate the continued development and progress of both fields.

APPLIED PHYSICS LETTERS (2021)

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Flip-Chip Bonded Evanescently Coupled III-V-on-Si Single-Mode Laser with Slotted Feedback Structure

Tao Shi et al.

Summary: This study achieved the integration of a specially designed InP semiconductor optical amplifier (SOA) with a silicon photonics circuit using a slotted feedback structure, resulting in a low-cost single-mode laser with improved integration efficiency and output performance.

IEEE PHOTONICS TECHNOLOGY LETTERS (2021)

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Low noise, tunable silicon photonic lasers

A. Malik et al.

Summary: Silicon photonics has emerged as a leader in the next generation of consumer products, with a focus on complex optical functionalities such as on-chip lasers. This paper reviews the impact of silicon photonic chips on improving tuning range and noise characteristics significantly, covering two key wavelength bands for optical communications.

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III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Photonic Integrated Circuits

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Ring-Resonator Based Widely-Tunable Narrow-Linewidth Si/InP Integrated Lasers

Minh A. Tran et al.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2020)

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High-Power, Narrow-Linewidth, Miniaturized Silicon Photonic Tunable Laser With Accurate Frequency Control

Yongkang Gao et al.

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Flip-Chip Integration of InP to SiN Photonic Integrated Circuits

Michael Theurer et al.

JOURNAL OF LIGHTWAVE TECHNOLOGY (2020)

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Reliable Widely Tunable Electrically Pumped 1050nm MEMS-VSCSELs with Amplifier in Single Butterfly Co-Package

Chris Burgner et al.

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Flip-Chip Integration of InP and SiN

M. Theurer et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2019)

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Ultra-Wideband WDM Transmission in S-, C-, and L-Bands Using Signal Power Optimization Scheme

Fukutaro Hamaoka et al.

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Multi-Micron Silicon Photonics Platform for Highly Manufacturable and Versatile Photonic Integrated Circuits

Aaron J. Zilkie et al.

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Tunable quantum dot lasers grown directly on silicon

Yating Wan et al.

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Low-Loss Si3N4 TriPleX Optical Waveguides: Technology and Applications Overview

Chris G. H. Roeloffzen et al.

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Integrated Hybrid Wavelength-Tunable III-V/Silicon Transmitter Based on a Ring-Assisted Mach-Zehnder Interferometer Modulator

Guilhem de Valicourt et al.

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Photonic Integrated Circuit Based on Hybrid III-V/Silicon Integration

Guilhem de Valicourt et al.

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Grating-Assisted Fiber to Chip Coupling for SOI Photonic Circuits

Siddharth Nambiar et al.

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Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

Minh A. Tran et al.

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Perspective: The future of quantum dot photonic integrated circuits

Justin C. Norman et al.

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Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon

Bin Tian et al.

NANO LETTERS (2017)

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Control of Widely Tunable Lasers With High-Q Resonator as an Integral Part of the Cavity

Tin Komljenovic et al.

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Hybrid-Integrated Wavelength and Reflectivity Tunable III-V/Silicon Transmitter

Guilhem de Valicourt et al.

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Novel Light Source Integration Approaches for Silicon Photonics

Zhechao Wang et al.

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Widely-Tunable Ring-Resonator Semiconductor Lasers

Tin Komljenovic et al.

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Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System

Tomohiro Kita et al.

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Demonstration of a Discretely Tunable III-V-on-Silicon Sampled Grating DFB Laser

Soeren Dhoore et al.

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Recent Advances and New Trends in Flip Chip Technology

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Integrated finely tunable microring laser on silicon

D. Liang et al.

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Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

Tomohiro Kita et al.

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Widely Tunable Narrow-Linewidth Monolithically Integrated External-Cavity Semiconductor Lasers

Tin Komljenovic et al.

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Silicon Photonic Hybrid Ring-Filter External Cavity Wavelength Tunable Lasers

Naoki Kobayashi et al.

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Fully integrated hybrid silicon two dimensional beam scanner

J. C. Hulme et al.

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Coupled-Ring-Resonator-Mirror-Based Heterogeneous III-V Silicon Tunable Laser

S. Srinivasan et al.

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High performance continuous wave 1.3 μm quantum dot lasers on silicon

Alan Y. Liu et al.

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Silicon Photonic Wavelength-Tunable Laser Diode With Asymmetric Mach-Zehnder Interferometer

Tomohiro Kita et al.

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Widely tunable Vernier ring laser on hybrid silicon

J. C. Hulme et al.

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Heterogeneously integrated III-V/silicon distributed feedback lasers

S. Keyvaninia et al.

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Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding

Stevan Stankovic et al.

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III-Vs on Si for photonic applications-A monolithic approach

Zhechao Wang et al.

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Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

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III-V/Silicon-on-Insulator Nanophotonic Cavities for Optical Network-on-Chip

Liu Liu et al.

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III-V/silicon photonics for on-chip and inter-chip optical interconnects

Gunther Roelkens et al.

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Recent progress in lasers on silicon

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High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si

Zetian Mi et al.

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Low-temperature, strong SiO2-SiO2 covalent wafer bonding for III-V compound semiconductors-to-silicon photonic integrated circuits

Di Liang et al.

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High-performance In0.5Ga0.5As/GaAs quantum-dot lasers on silicon with multiple-layer quantum-dot dislocation filters

Jun Yang et al.

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High-speed mode-locked quantum-dot lasers and optical amplifiers

Matthias Kuntz et al.

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Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Alexander W. Fang et al.

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Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

G. Roelkens et al.

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Wavelength tunable laser using silica double ring resonators

M Ishizaka et al.

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Thin-film devices fabricated with benzocyclobutene adhesive wafer bonding

I Christiaens et al.

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Microphotonics devices based on silicon microfabrication technology

T Tsuchizawa et al.

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Selective wafer-level adhesive bonding with benzocyclobutene for fabrication of cavities

J Oberhammer et al.

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Oxidation and induced damage in oxygen plasma in situ wafer bonding

D Pasquariello et al.

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High quality Ge on Si by epitaxial necking

TA Langdo et al.

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