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Advances in silicon-based, integrated tunable semiconductor lasers

期刊

NANOPHOTONICS
卷 12, 期 2, 页码 197-217

出版社

WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2022-0699

关键词

heterogeneous integration; hybrid integration; narrow linewidth; silicon nitride; silicon photonics; tunable semiconductor lasers

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Tunable semiconductor lasers have various important applications, but integrating light sources with silicon is necessary for achieving high-performance tunable semiconductor lasers due to the poor light-emitting properties of silicon. This study reviews the methods for integrating silicon-based light sources and the development of silicon-based integrated tunable semiconductor lasers. It also summarizes the techniques to reduce the linewidth of tunable lasers and discusses the trends and prospects of silicon-based integrated light sources and tunable lasers.
Tunable semiconductor lasers have many important applications such as wavelength division multiplexing, light detection and ranging, and gas detection. The increased interest in silicon photonics has led to the rapid development of miniaturized on-chip tunable semiconductor lasers. However, silicon has poor light-emitting properties. Therefore, realizing high-performance tunable semiconductor lasers requires the integration of light sources with silicon. In this study, we review silicon-based light source integration methods and the development of silicon-based integrated tunable semiconductor lasers. Considering that narrow-linewidth performance greatly expands the applications of tunable semiconductor lasers, methods for reducing the linewidth of tunable lasers are summarized. Finally, the development trends and prospects for silicon-based integrated light sources and silicon-based integrated tunable lasers are analyzed and discussed.

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