Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride

Article Engineering, Electrical & Electronic

Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy

Shinnosuke Yasuoka et al.

Summary: The effect of pure mechanical strain on the ferroelectric properties of (Al0.8Sc0.2)N films deposited on different thermal expansion coefficient substrates was investigated. It was found that the mechanical lattice strains could be controlled by using substrates with different thermal expansion coefficients. The changes in remanent polarization and coercive field values could be understood by crystal anisotropy.

ACS APPLIED ELECTRONIC MATERIALS (2022)

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Article Physics, Applied

Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN

Niklas Wolff et al.

Summary: This study presents atomic-scale evidence for ferroelectric polarization inversion in a wurtzite-type material using epitaxial Al0.75Sc0.25N thin films. The electric field-induced formation of Al-polar inversion domains in the originally N-polar film is confirmed by atomic resolution imaging and anisotropic etching. The epitaxial relationship of the sapphire/AlN/Mo/AlScN multilayer stack is discussed with results from electron diffraction experiments and XRD pole figures.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Physics, Applied

A possible origin of the large leakage current in ferroelectric Al1-xScxN films

Junji Kataoka et al.

Summary: Research on 50 nm thick ferroelectric Al0.78Sc0.22N films with TiN electrodes revealed that the leakage current gradually shifted during initial switching, stabilizing at a specific value. This change was interpreted as the formation of a tunneling barrier due to nitrogen vacancies at the metal interface.

JAPANESE JOURNAL OF APPLIED PHYSICS (2021)

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Article Physics, Applied

Next generation ferroelectric materials for semiconductor process integration and their applications

T. Mikolajick et al.

Summary: Ferroelectrics are materials with a variety of functionalities, which need to be integrated into semiconductor processes for integrated systems. Recent discoveries in hafnium oxide and aluminum scandium nitride have expanded the potential for ferroelectric functions in integrated electronics in the future.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Engineering, Electrical & Electronic

Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

Dixiong Wang et al.

IEEE ELECTRON DEVICE LETTERS (2020)

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Article Physics, Applied

AlScN: A III-V semiconductor based ferroelectric

Simon Fichtner et al.

JOURNAL OF APPLIED PHYSICS (2019)

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Article Physics, Applied

Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

Morito Akiyama et al.

APPLIED PHYSICS LETTERS (2009)

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Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride

相关参考文献

Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy

Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN

A possible origin of the large leakage current in ferroelectric Al1-xScxN films

Next generation ferroelectric materials for semiconductor process integration and their applications

Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

AlScN: A III-V semiconductor based ferroelectric

Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

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