We study the intervalley scattering induced by the Coulomb repulsion as a purely electronic mechanism for the origin of superconductivity in a few layers of graphene. The pairing is strongly favored by the presence of van Hove singularities in the density of states. We consider three different heterostructures: twisted bilayer graphene, rhombohedral trilayer graphene, and Bernal bilayer graphene. We obtain trends and estimates of the superconducting critical temperature in agreement with the experimental findings, which might identify the intervalley Coulomb scattering as a universal pairing mechanism in a few layers of graphene.
We study the intervalley scattering induced by the Coulomb repulsion as a purely electronic mechanism for the origin of superconductivity in a few layers of graphene. The pairing is strongly favored by the presence of van Hove singularities in the density of states. We consider three different heterostructures: twisted bilayer graphene, rhombohedral trilayer graphene, and Bernal bilayer graphene. We obtain trends and estimates of the superconducting critical temperature in agreement with the experimental findings, which might identify the intervalley Coulomb scattering as a universal pairing mechanism in a few layers of graphene.
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