4.6 Article

Multiple Magnetic Phases and Anomalous Hall Effect in Sb1.9Fe0.1Te2.85S0.15 Topological Insulators

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JOURNAL OF PHYSICAL CHEMISTRY C
卷 127, 期 5, 页码 2508-2517

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AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.2c06655

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This study investigates the impact of complicated magnetic phases on anomalous Hall effect (AHE) in Sb1.9Fe0.1Te2.85S0.15 through magneto-transport experiments. It is found that ordered glassy phases, competitive FM-AFM interactions, and nontrivial surface state coexist in this material. AC susceptibility results reveal a shift in freezing temperature with excitation frequency, and comprehensive analysis confirms slower dynamics and the formation of a cluster spin glass state. Furthermore, de Haas-van Alphen oscillation study shows variations in Fermi pocket quantity and shape with doping, indicating a rich complexity in the underlying electronic structure.
Due to fundamental and technological concerns, investigating materials with topological magnetic structures has always been a focus of significant research. We explored Sb1.9Fe0.1Te2.85S0.15 where a unique combination of disordered glassy phases, competitive FM-AFM interactions, and nontrivial surface state coexisted at the same time. We have discussed the impact of those complicated magnetic phases upon the observed AHE in Sb1.9Fe0.1Te2.85S0.15 with magneto-transport studies. The AC susceptibility results demonstrate a shift in the freezing temperature with excitation frequency, the comprehensive analysis verifies the slower dynamics, and a nonzero Vogel-Fulcher temperature T0 suggests cluster spin glass. This, together with an intermediate value of the Mydosh parameter, provides an evidence for the formation of a cluster spin glass state in the present system. Topological frustrated magnets, which can host both magnetic frustrations and Dirac quasi-particles, are highly sought after class of compounds. Furthermore, as seen by the de Haas-van Alphen (dHvA) oscillation study, the fermiology deviates with doping and produces multiple Fermi pockets, revealing a rich complexity in the underlying electronic structure.

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