Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (vol 11, pg 1704, 2023)

Correction for 'Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction' by Teng Zhan et al., J. Mater. Chem. C, 2023, 11, 1704-1713, https://doi.org/10.1039/D2TC04491A.

Automated summary

This article investigates the electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction. A correction is made to provide more accurate and analyzed results.