Ilmenite and amorphous SnTiO3 as p-type oxide semiconductors

A Sn2+ based oxide, ilmenite SnTiO3, is investigated as a potential p-type oxide. Due to Sn2+ chemistry, ilmenite SnTiO3 shows a dispersive valence band with a wide band gap of 2.4 eV and a high hole mobility of similar to 60 cm(2) V-1 s(-1). Thermodynamic studies confirm its phase stability and synthesizability. Defect calculations demonstrate its high hole dopability. Further band alignment calculations show its shallow valence band edge suitable for metal contact. Amorphous phase SnTiO3 is revealed to be a high mobility hole-dopable oxide. The results suggest that ilmenite and amorphous SnTiO3 is an experimentally realizable p-type oxide promising for future oxide electronics.

Automated summary

A Sn2+ based oxide, ilmenite SnTiO3, with a dispersive valence band and wide band gap of 2.4 eV has been investigated as a potential p-type oxide. It exhibits a high hole mobility of 60 cm(2) V-1 s(-1) and phase stability. Defect calculations show it has high hole dopability, and band alignment calculations indicate its suitability for metal contact. Amorphous phase SnTiO3 has been found to be a highly mobile hole-dopable oxide. These findings suggest that ilmenite and amorphous SnTiO3 are promising p-type oxides for future oxide electronics.