Achieving adjustable digital-to-analog conversion in memristors with embedded Cs2AgSbBr6 nanoparticles

In this work, the proportions of Cs2AgSbBr6 nanoparticles (NPs) mixed in a PMMA film are adjusted to the digital and analog types of resistive switching (RS) behaviors in Ag/PMMA&Cs2AgSbBr6-NPs/ITO memristor devices. It is confirmed that when the concentration of NPs doped in the PMMA film is about 5 wt%, the memristor devices demonstrate bipolar digital RS behaviors with excellent electrical characteristics such as low operating voltage, high ON/OFF ratio (>500), good endurance (>800 cycles), and stable retention ability (>10(4) s). However, the devices showed a transition to analog-type memristive behavior when the concentration of NPs doped in the PMMA film is around 10 wt%, and several artificial synapse behaviors are successfully simulated. The device model simulation is also used to explore the effect of the NPs on the local electric field and growing filaments. Our work provides an opportunity to explore next-generation artificial synapse devices based on lead-free halide perovskites.

Automated summary

The proportions of Cs2AgSbBr6 nanoparticles (NPs) in a PMMA film were adjusted to achieve digital and analog resistive switching (RS) behaviors in Ag/PMMA&Cs2AgSbBr6-NPs/ITO memristor devices. At a concentration of around 5 wt% of NPs in the PMMA film, the devices showed bipolar digital RS behaviors with excellent electrical characteristics. However, at a concentration of around 10 wt% of NPs, the devices exhibited analog-type memristive behavior and successfully simulated artificial synapse behaviors.