Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance

Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The improved performances result from the exposed In or Te atoms cluster, which affects the conductivity and active sites. This work provides insights into the comprehensive electrochemical attributes of layered indium chalcogenides and exhibits a new route for catalyst synthesis.

Automated summary

Here, the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) is reported, and the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are studied. The improved performances result from the exposed In or Te atoms cluster, which affects the conductivity and active sites. This work provides insights into the comprehensive electrochemical attributes of layered indium chalcogenides and exhibits a new route for catalyst synthesis.