Colloquium: Quantum anomalous Hall effect

The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators-topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. The quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the oBi; Sb thorn 2Te3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moire ' materials formed from graphene, and (iv) moire ' materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.

Automated summary

The quantum Hall effect is the characteristic experimental fingerprint of Chern insulators, which combine quantized Hall resistance with zero longitudinal resistance. Chern insulators exhibit nontrivial bulk band topology expressed by chiral states that carry current along sample edges without dissipation. The quantum anomalous Hall effect refers to the occurrence of quantum Hall effects without external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has been realized in four different classes of two-dimensional materials.