Design and Fabrication of Optical Sensors Based on Neodymium (Nd) Doped Titanium Dioxide (TiO2) Layer Prepared by Sol-Gel Dip-Coating Method

A high performance and stable UV photodetector with a bsorbant layer of Neodymium (Nd) doped Titanium dioxide (TiO2) is reported. The Neodymium (Nd) doped Titanium dioxide (TiO2) layer was chractarized with several tools. XRD and FTIR revaled that the crsytal structure of Neodymium (Nd) doped Titanium dioxide (TiO2) has changed compared with that of the undoped anatase Titanium dioxide (TiO2). Furthermore, the ultraviolet-visibleand photoluminescence spectrometers reveal that the measured absorption and emission of the hybrid Nd doped TiO2 layer have significantly enhanced compared with that of the undoped Titanium dioxide (TiO2). In addition. The photodetector based on Neodymium (Nd) doped Titanium dioxide (TiO2) shows a low- level dark current (Idark=0.13 nA), a high-level light current (Ilight=15655.6 nA), an ON/OFF ratio (1.2 x 105), a responsivity (R=0.32 A/W), and a specific detectivity (D*=4.2 x1012 J). The photoresponsivity (R) of Nd doped TiO2 layer was improved by nearly 3 times in magnitude in comparison with the photoresponsivity of the undoped TiO2 layer PD without the Nd. This result pave the way for utlizing the hybrid Nd doped TiO2 in enhncing performance of optolectronics.

Automated summary

A high performance and stable UV photodetector with an absorbent layer of Neodymium (Nd) doped Titanium dioxide (TiO2) is introduced. The crystal structure of the Neodymium (Nd) doped Titanium dioxide (TiO2) has changed compared to the undoped anatase Titanium dioxide (TiO2). The absorption and emission of the hybrid Nd doped TiO2 layer have significantly enhanced. The photodetector based on Neodymium (Nd) doped Titanium dioxide (TiO2) exhibits low dark current, high light current, ON/OFF ratio, responsivity, and specific detectivity. The photoresponsivity of the Nd doped TiO2 layer has improved nearly three times compared to the undoped TiO2 layer, paving the way for enhanced performance of optoelectronics.