Gelatin/Carboxylated Chitosan Gated Oxide Neuromorphic Transistor

Mimicking of brain perceptual processing mode is of great importance for the design of bionic intelligent perceptual system. On the meantime, adopting functional materials with biocompatibility and biodegradability to construct environment-friendly neuromorphic devices is also an important aspect for synaptic electronics. Here, gelatin/carboxylated chitosan (GEL/C-CS) composite electrolyte film was adopted as gate dielectrics in oxide neuromorphic transistors. Synaptic plasticities, including excitory post synaptic current and paired pulse facilitation, were mimicked on the oxide neuromorphic transistor under different humidities. A quantitative processing method for tactile recognition of objects was proposed based on the spike number dependent synaptic plasticity. An artificial neural network was built in further. Recognition accuracy of MNIST handwritten digits is above 90%. Data from above evaluation show that the proposed GEL/C-CS gated neuromorphic device has a promising application potential in the design of bionic intelligent perceptual systems and brain inspired neuromorphic systems.

Automated summary

Mimicking brain perceptual processing and using biocompatible and biodegradable materials in neuromorphic devices are both important for the design of bionic intelligent systems. In this study, a gelatin/carboxylated chitosan composite electrolyte film was used as the gate dielectric in oxide neuromorphic transistors, successfully mimicking synaptic plasticity. A quantitative processing method for tactile recognition based on spike number dependent synaptic plasticity was proposed, and an artificial neural network achieved a recognition accuracy of over 90% for MNIST handwritten digits. The results show that the proposed GEL/C-CS gated neuromorphic device has promising application potential in the design of bionic intelligent systems and brain-inspired neuromorphic systems.