3.8 Article

Fabrication of light trapping structures specialized for near-infrared light by nanoimprinting for the application to thin crystalline silicon solar cells

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DISCOVER NANO
卷 18, 期 1, 页码 -

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SPRINGER
DOI: 10.1186/s11671-023-03840-6

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Solar cell; Light trapping; Nanoimprint; Colloidal lithography; Dry etching

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Vehicle-integrated photovoltaics (VIPV) is a promising technology for achieving a decarbonized society in the future. The solar cells used in VIPV require low cost, high efficiency, and the ability to be applied to curved surfaces. One way to meet these requirements is by reducing the thickness of the silicon substrate, although it may result in lower near-infrared light absorption and efficiency. To address this issue, a nanoimprinting method was employed in this study to fabricate submicron-sized light trapping structures (LTSs) on solar cells over a large area. By controlling the parameters such as silica coverage, diameter of silica particles, and etching time, the density, height, and size of LTSs can be controlled, leading to improved light absorption and potential short-circuit current gain.
Vehicle-integrated photovoltaics (VIPV) are gaining attention to realize a decarbonized society in the future, and the specifications for solar cells used in VIPV are predicated on a low cost, high efficiency, and the ability to be applied to curved surfaces. One way to meet these requirements is to make the silicon substrate thinner. However, thinner substrates result in lower near-infrared light absorption and lower efficiency. To increase light absorption, light trapping structures (LTSs) can be implemented. However, conventional alkali etched pyramid textures are not specialized for near-infrared light and are insufficient to improve near-infrared light absorption. Therefore, in this study, as an alternative to alkaline etching, we employed a nanoimprinting method that can easily fabricate submicron-sized LTSs on solar cells over a large area. In addition, as a master mold fabrication method with submicron-sized patterns, silica colloidal lithography was adopted. As a result, by controlling silica coverage, diameter of silica particles (D), and etching time (t(et)), the density, height, and size of LTSs could be controlled. At the silica coverage of 40%, D = 800 nm, and t(et) = 5 min, the reduction of reflectance below 65% at 1100 nm and the theoretical short-circuit current gain of 1.55 mA/cm(2) was achieved.

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