期刊
2023 28TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE, ASP-DAC
卷 -, 期 -, 页码 184-185出版社
IEEE
DOI: 10.1145/3566097.3567944
关键词
memristor; RRAM; prototyping platform; neural networks
We have developed an integrated circuit that combines CMOS and hafnium-oxide memristor technology, serving as a prototyping platform for memristor-related projects. The circuit includes both peripheral circuitry for using memristors in digital circuits, and an analog mode with direct access to memristors. This platform allows for optimizing the conditions of reading and writing memristors, as well as the development and testing of innovative memristor-based neuromorphic concepts.
We present an integrated circuit fabricated in a process co-integrating CMOS and hafnium-oxide memristor technology, which provides a prototyping platform for projects involving memristors. Our circuit includes the periphery circuitry for using memristors within digital circuits, as well as an analog mode with direct access to memristors. The platform allows optimizing the conditions for reading and writing memristors, as well as developing and testing innovative memristor-based neuromorphic concepts.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据