4.6 Article

Mapping quantum geometry and quantum phase transitions to real space by a fidelity marker

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PHYSICAL REVIEW B
卷 107, 期 20, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.107.205133

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This article discusses the quantum geometry in the momentum space of semiconductors and insulators, focusing on the quantum metric of the valence-band Bloch state. The concept of fidelity number is introduced as an average distance between neighboring Bloch states. The fidelity number can be expressed in real space as a fidelity marker, which can be calculated from diagonalizing the lattice Hamiltonian. The article further explores the applications of fidelity number and marker in measuring optical absorption and as universal indicators of quantum phase transitions.
The quantum geometry in the momentum space of semiconductors and insulators, described by the quantum metric of the valence-band Bloch state, has been an intriguing issue owing to its connection to various material properties. Because the Brillouin zone is periodic, the integration of quantum metric over momentum space represents an average distance between neighboring Bloch states, which we call the fidelity number. We show that this number can further be expressed in real space as a fidelity marker, which is a local quantity that can be calculated directly from diagonalizing the lattice Hamiltonian. A linear-response theory is further introduced to generalize the fidelity number and marker to finite temperature and moreover demonstrates that they can be measured from the global and local optical absorption power against linearly polarized light. In particular, the fidelity number spectral function in two-dimensional systems can be easily measured from the opacity of the material. Based on the divergence of quantum metric, a nonlocal fidelity marker is further introduced and postulated as a universal indicator of any quantum phase transitions provided the crystalline momentum remains a good quantum number, and it may be interpreted as a Wannier state correlation function. The ubiquity of these concepts is demonstrated for a variety of topological insulators and topological phase transitions in different dimensions.

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