Homogeneous interfacial electron transfer promotes photoinduced hole extraction for phenol mineralization

The inherent correlation of photoinduced hole extraction with the Fermi level can promote mineralization of contaminants by facilitating the transfer of electrons from a semiconductor to the solution. We here developed a fixed-bed photocatalyst based on a homogeneous contact that can facilitate oxygen reduction by promoting semiconductor-cocatalyst interfacial electron transfer and collision of dissolved oxygen with the catalytic sites. This photocatalyst configuration can also alleviate competitive light absorption by contaminants like phenol and cocatalyst. The efficient electron transfer synergistically promotes hydroxyl radical generation for mineralization.

Automated summary

The correlation between photoinduced hole extraction and the Fermi level promotes the mineralization of contaminants by facilitating electron transfer from a semiconductor to the solution. We have developed a fixed-bed photocatalyst based on a homogeneous contact that enhances oxygen reduction through interfacial electron transfer and collision between dissolved oxygen and catalytic sites. This photocatalyst configuration also reduces competitive light absorption by contaminants and cocatalysts. The efficient electron transfer synergistically promotes the generation of hydroxyl radicals for mineralization.