Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO3 films

Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO3 thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.

Automated summary

This study investigates the electrical modulation of magnetic states in single-phase multiferroic materials using domain-wall magnetoelectric (ME) coupling. Results show that the domain-wall ME effect is dramatically enhanced when the separation between ferroelectric (FE) domain walls shrinks below the characteristic width of the antiferromagnetic (AFM) domain walls. These findings suggest that the domain-wall ME effect is capable of electrical control of magnetization.